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SI4714DY-T1-GE3

更新时间: 2024-09-16 09:26:03
品牌 Logo 应用领域
威世 - VISHAY 晶体肖特基二极管小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
10页 274K
描述
N-Channel 30 V (D-S) MOSFET with Schottky Diode

SI4714DY-T1-GE3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
风险等级:5.38Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):13.6 A最大漏极电流 (ID):13.6 A
最大漏源导通电阻:0.0135 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):4.5 W子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI4714DY-T1-GE3 数据手册

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New Product  
Si4714DY  
Vishay Siliconix  
N-Channel 30 V (D-S) MOSFET with Schottky Diode  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
Definition  
VDS (V)  
RDS(on) ()  
ID (A)a  
13.6  
Qg (Typ.)  
SkyFET Monolithic TrenchFET Gen.   
Power MOSFET and Schottky Diode  
100 % Rg Tested  
0.0135 at VGS = 10 V  
0.0175 at VGS = 4.5 V  
30  
7.3 nC  
12.0  
100 % UIS Tested  
Compliant to RoHS Directive 2002/95/EC  
SO-8  
APPLICATIONS  
Notebook PC  
- System Power, Memory  
Buck Converter  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
Synchronous Rectifier Switch  
D
Top View  
Schottky Diode  
G
Ordering Information:  
Si4714DY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
S
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
VDS  
Limit  
30  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
T
C = 25 °C  
TC = 70 °C  
A = 25 °C  
13.6  
10.7  
10.1b, c  
Continuous Drain Current (TJ = 150 °C)  
ID  
T
8.1b, c  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current (t = 300 µs)  
50  
TC = 25 °C  
TA = 25 °C  
3.8  
Continuous Source-Drain Diode Current  
2.1b, c  
15  
IAS  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
L = 0.1 mH  
EAS  
11.25  
4.5  
mJ  
W
TC = 25 °C  
TC = 70 °C  
2.8  
PD  
Maximum Power Dissipation  
2.5b, c  
1.6b, c  
TA = 25 °C  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typ.  
38  
Max.  
50  
Unit  
Maximum Junction-to-Ambientb, d  
t 10 s  
°C/W  
RthJF  
Maximum Junction-to-Foot (Drain)  
Steady State  
22  
28  
Notes:  
a. Based on TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. Maximum under Steady State conditions is 85 °C/W.  
Document Number: 67942  
S11-1180-Rev. A, 13-Jun-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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