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SI4728CY-T1 PDF预览

SI4728CY-T1

更新时间: 2024-11-06 14:44:43
品牌 Logo 应用领域
威世 - VISHAY 驱动光电二极管接口集成电路
页数 文件大小 规格书
10页 95K
描述
IC BUF OR INV BASED PRPHL DRVR, PDSO16, SOP-16, Peripheral Driver

SI4728CY-T1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP,针数:16
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.76
内置保护:TRANSIENT; UNDER VOLTAGE接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PDSO-G16JESD-609代码:e0
长度:9.9 mm功能数量:1
端子数量:16最高工作温度:85 °C
最低工作温度:-40 °C输出电流流向:SINK
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240认证状态:Not Qualified
座面最大高度:1.75 mm最大供电电压:5.5 V
最小供电电压:4.5 V标称供电电压:5 V
电源电压1-最大:30 V电源电压1-分钟:4.5 V
表面贴装:YES温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30断开时间:0.1 µs
宽度:3.9 mmBase Number Matches:1

SI4728CY-T1 数据手册

 浏览型号SI4728CY-T1的Datasheet PDF文件第2页浏览型号SI4728CY-T1的Datasheet PDF文件第3页浏览型号SI4728CY-T1的Datasheet PDF文件第4页浏览型号SI4728CY-T1的Datasheet PDF文件第5页浏览型号SI4728CY-T1的Datasheet PDF文件第6页浏览型号SI4728CY-T1的Datasheet PDF文件第7页 
Si4728CY  
Vishay Siliconix  
N-Channel Synchronous MOSFETs with Break-Before-Make  
FEATURES  
D 4.5- to 30-V Operation  
D 30-V MOSFETs  
D Driver Impedance—3 W  
D High Side: 0.018 W @ VDD = 4.5 V  
D Low Side: 0.0105 W @ VDD = 4.5 V  
D Switching Frequency: 250 kHz to 1 MHz  
D Undervoltage Lockout  
D Fast Switching Times (30 ns typ.)  
DESCRIPTION  
The Si4728CY n-channel synchronous MOSFET with  
break-before-make (BBM) is a high speed driver designed to  
operate in high frequency dc-dc switchmode power supplies.  
It’s purpose is to simplify the use of n-channel MOSFETs in  
high frequency buck regulators. This device is design to be  
used with any single output PWM IC or ASIC to produce a  
highly efficient low cost synchronous rectifier converter. A  
synchronous enable pin (disable = low, enable = high)  
controls the synchronous function for light load conditions.  
The Si4728CY is packaged in Vishay Siliconix’s high  
performance LITTLE FOOTR SO-16 package.  
FUNCTIONAL BLOCK DIAGRAM  
4.5 V to 30 V  
V
DD  
C
BOOT  
Si4728  
5 V  
D
1
C
BOOT  
Q
1
MOSFET  
Drive Circuitry  
with  
Break-Before-  
Make  
S
D
1
V
OUT  
SYNC EN  
2
+
DC-DC  
Controller  
IN  
Q
2
GND  
S
2
GND  
GND  
Document Number: 71286  
S-03075—Rev. C, 03-Feb-03  
www.vishay.com  
1

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