SI4730EY

更新时间： 2024-11-08 22:50:19

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
4页	70K
描述
Current-Sensing Power MOSFETs

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SI4730EY 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.88
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	8 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	1.7 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

SI4730EY 数据手册

AN606

Vishay Siliconix

Current-Sensing Power MOSFETs

Kandarp Pandya

INTRODUCTION

Vishay Siliconix current-sensing power MOSFETs offer a

simple means of incorporating a protection feature into an

electronic control circuit and avoiding catastrophic failures

resulting from overcurrent (overload) and/or short-circuit

conditions. The device package is a modified D²PAK with five

pins. The MOSFET termination retains the standard D²PAK

footprint for a three-pin device. The additional two pins provide

termination for a current-sense output and an internal Kelvin

connection to the source. For current sensing, the MOSFET

design employs a small number of the total number of

MOSFET cells in a known ratio. The latter define the

current-sense parameters. A typical control interface uses a

simple circuit with an op-amp or a comparator. This approach

offers the freedom of control-level setting and facilitates its

incorporation into the main control system.

between gate and drain-stub and between drain-stub and source,

respectively. See Application Note 826, Recommended Minimum

Pad Patterns With Outline Access for Vishay Siliconix

MOSFETs

(http://www.vishay.com/doc?72286),

for

the

recommended PCB layout dimensional details of the pad pattern.

Modified-part library symbols for schematic symbol and PCB

layout are available on the “Protel” (PCB design software)

platform. For soft copy, please contact Vishay Siliconix in Santa

Clara, Calif., in the United States, by phoning 1-408-567-8927.

The Principle Behind the Current-Sensing Feature

The most efficient way to sense the drain-source current is to

use the ratio-metric measurement. In a power MOSFET, it is

possible to implement this method easily.

DEVICE DESCRIPTION AND PRINCIPLE OF

OPERATION

The cell density, a favored term within the power MOSFET

industry, conveys that the power MOSFET structure consists

of many cells connected in parallel. In principle, these cells

constitute a resistive path for drain-source current. Electrically,

these cells are parallel connected resistors, r_DS(on)s. Each cell

- being identical in structure and electrical characteristics -

shares the current equally when the device is on. This property

enables design of a MOSFET with a current-sensing feature.

D (Tab, 3)

D PAK-5

(1)

(2)

(4)

Dividing the MOSFET cells in a known ratio creates two paths

that share the drain-source current. The path with the smaller

number of cells constitutes the sense current, which is much

smaller than the current conducting through the rest of the

cells. A very simple, low-power, external circuit can measure

this current. Multiplying this value with the cell ratio gives the

total drain-source current.

KELVIN

1 2 3 4 5

SENSE

S (5)

N-Channel MOSFET

SENSE

KELVIN

The classic Kelvin termination for the return of sense current

to the main source connection insures the measurement

accuracy. This terminal not only eliminates the ground loop,

but also minimizes the imbalance of internal structures with

two current paths.

FIGURE 1. Package Information and Schematic Symbol

Package Information and Schematic Symbol, Figure 1, shows a

partial reproduction of a datasheet for a current-sensing

MOSFET, SUM50N03-13C. Gate, drain-stub/tab, and source

(pins 1, 2, and 3) are in the same position as in a standard D²PAK

(TO-263) MOSFET. However, pin-out modification is required to

incorporate current-sense (pin 2) and Kelvin-to-source (pin 4)

The Current-Sensing Parameters, Table 1, and the

Current-Sense Die Characteristics and Schematic, Figure 2,

help to demonstrate the current-sensing operation and circuit

implementation.

TABLE 1: Current Sense Characteristics

Current Sensing Ratio

= 1 A, V

= 10 V, R = 1.1 W

SENSE

420

520

3.5

620

GSS

Mirror Active Resistance

= 10 V, I = 10 mA

m(on)

Document Number: 71991

17-Dec-03

www.vishay.com

12 3 4

中文翻译

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与SI4730EY相关器件

型号	品牌	获取价格	描述	数据表
SI4730EY-T1	VISHAY	获取价格	TRANSISTOR 8000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8, FET General Purpose S
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SI4731-C40-GMR	SILICON	获取价格	Audio Single Chip Receiver, ROHS COMPLIANT, QFN-20
SI4731-C40-GU	SILICON	获取价格	Audio Single Chip Receiver, PDSO24, ROHS COMPLIANT, MO-137AE, SSOP-24
SI4731-C40-GUR	SILICON	获取价格	Audio Single Chip Receiver, PDSO24, ROHS COMPLIANT, MO-137AE, SSOP-24
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