5秒后页面跳转
SI4724CY-T1 PDF预览

SI4724CY-T1

更新时间: 2024-09-16 09:26:03
品牌 Logo 应用领域
威世 - VISHAY 外围驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
11页 161K
描述
N-Channel Synchronous MOSFETs With Break-Before-Make

SI4724CY-T1 技术参数

是否无铅:含铅生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP,
针数:16Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.82Is Samacsys:N
其他特性:AIPDR312内置保护:TRANSIENT; UNDER VOLTAGE
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PDSO-G16
JESD-609代码:e0长度:9.9 mm
功能数量:1端子数量:16
最高工作温度:85 °C最低工作温度:-40 °C
输出电流流向:SOURCE AND SINK封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
认证状态:Not Qualified座面最大高度:1.75 mm
最大供电电压:5.5 V最小供电电压:4.5 V
标称供电电压:5 V电源电压1-最大:30 V
电源电压1-分钟:4.5 V表面贴装:YES
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3.9 mmBase Number Matches:1

SI4724CY-T1 数据手册

 浏览型号SI4724CY-T1的Datasheet PDF文件第2页浏览型号SI4724CY-T1的Datasheet PDF文件第3页浏览型号SI4724CY-T1的Datasheet PDF文件第4页浏览型号SI4724CY-T1的Datasheet PDF文件第5页浏览型号SI4724CY-T1的Datasheet PDF文件第6页浏览型号SI4724CY-T1的Datasheet PDF文件第7页 
Si4724  
Vishay Siliconix  
N-Channel Synchronous MOSFETs With Break-Before-Make  
FEATURES  
DESCRIPTION  
0 V to 30 V operation  
The Si4724CY N-Channel synchronous MOSFET with  
break-before-make (BBM) is a high speed driver designed to  
operate in high frequency DC/DC switchmode power  
supplies. It’s purpose is to simplify the use of N-Channel  
MOSFETs in high frequency buck regulators. This device is  
designed to be used with any single output PWM IC or ASIC  
to produce a highly efficient low cost synchronous rectifier  
converter. A synchronous enable pin (disable = low,  
enable = high) controls the synchronous function for light  
load conditions.  
Driver impedance-3  
Undervoltage lockout  
Fast switching times  
30 V MOSFETs  
High side: 0.0375 at VDD = 4.5 V  
Low side: 0.029 at VDD = 4.5 V  
Switching frequency: 250 kHz to 1 MHz  
Integrated schottky  
The Si4724CY is packaged in Vishay Siliconix’s high  
performance LITTLE FOOT® SO-16 package.  
FUNCTIONAL BLOCK DIAGRAM  
V
DD  
BOOT  
D
1
Q
Q
1
Level Shift  
S
1
Undervoltage  
Lockout  
D
2
V
DD  
IN  
SYNC EN  
2
S
2
+
-
V
REF  
GND  
Document Number: 71863  
S11-1185-Rev. F, 13-Jun-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SI4724CY-T1相关器件

型号 品牌 获取价格 描述 数据表
SI4724CY-T1-E3 VISHAY

获取价格

N-Channel Synchronous MOSFETs With Break-Before-Make
SI4726CY VISHAY

获取价格

N-Channel Synchronous MOSFETs with Break-Before-Make
SI4728CY VISHAY

获取价格

N-Channel Synchronous MOSFETs with Break-Before-Make
SI4728CY-T1 VISHAY

获取价格

IC BUF OR INV BASED PRPHL DRVR, PDSO16, SOP-16, Peripheral Driver
SI4730 SILICON

获取价格

Broadcast AM/FM Radio Receiver
SI4730-A10-GM SILICON

获取价格

Audio Single Chip Receiver,
SI4730-B20-GMR SILICON

获取价格

Telecom Circuit, 1-Func, 3 X 3 MM, 0.55 MM HEIGHT, ROHS COMPLIANT, QFN-20
SI4730-C40-GM SILICON

获取价格

Audio Single Chip Receiver, ROHS COMPLIANT, QFN-20
SI4730-C40-GU SILICON

获取价格

BROADCAST AM/FM RADIO RECEIVER
SI4730-D50 SILICON

获取价格

BROADCAST AM/FM RADIO RECEIVER