是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.78 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 8 A |
集电极-发射极最大电压: | 80 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 750 | JESD-30 代码: | R-CXSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | UNSPECIFIED | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SHD4182B | SENSITRON |
获取价格 |
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-S | |
SHD4182S | SENSITRON |
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Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-S | |
SHD4183 | SENSITRON |
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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Ceramic, Metal-S | |
SHD418301 | SENSITRON |
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Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, | |
SHD418302 | SENSITRON |
获取价格 |
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-S | |
SHD418302B | SENSITRON |
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Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-S | |
SHD418309 | SENSITRON |
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Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal | |
SHD418309A | SENSITRON |
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Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal | |
SHD418309B | SENSITRON |
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Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal | |
SHD4183A | SENSITRON |
获取价格 |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Ceramic, Metal-S |