Datasheet > SGU02G64A1BD1SA-CCR

SGU02G64A1BD1SA-CCR

更新时间： 2024-11-18 01:11:39

品牌	Logo	应用领域
其他 - ETC		动态存储器双倍数据速率
页数	文件大小	规格书
16页	589K
描述
2048MB DDR3 . SDRAM UDIMM

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数据手册

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Data Sheet

Rev.1.0

12.04.2013

2048MB DDR3 – SDRAM UDIMM

240 Pin UDIMM

Features:

240-pin 64-bit DDR3 unbuffered Dual-In-Line Double Data

Rate Synchronous DRAM module

SGU02G64A1BD1SA-xxR

2GByte in FBGA Technology

RoHS compliant

Module organization: single rank 256M x 64

V_DD= 1.5V ±0.075V, V_DDQ1.5V ±0.075V

1.5V I/O ( SSTL_15 compatible)

Fly-by-bus with termination for C/A & CLK bus

On-board I²C temperature sensor with integrated serial

presence-detect (SPD) EEPROM

Options:

Gold-contact pads

Data Rate / Latency

DDR3 1066 MT/s CL7

DDR3 1333 MT/s CL9

DDR3 1600 MT/s CL11

Marking

-BB

This module is fully pin and functional compatible to the

JEDEC PC3-12800 spec. and JEDEC- Standard MO-268.

(see www.jedec.org)

-CC

-DC

The pcb and all components are manufactured according

to the RoHS compliance specification [EU Directive

2002/95/EC Restriction of Hazardous Substances (RoHS)]

Module Density

2048MB with 8 dies and 1 rank

Standard Grade

Grade W

(T_A)

(T_C)

(T_A)

(T_C)

0°C to 70°C

0°C to 85°C

-40°C to 85°C

-40°C to 95°C

DDR3 - SDRAM component Samsung

K4B2G0846D-HCH9 DIE-Rev.D (up to 1333MT/s)

K4B2G0846D-XXXX DIE-Rev.D (up to 1600MT/s)

256Mx8 DDR3 SDRAM in PG-TFBGA-78 package

8-bit prefetch architecture

Programmable CAS Latency, CAS Write Latency, Additive

Latency, Burst Length and Burst Type.

Environmental Requirements:

On-Die-Termination (ODT) and Dynamic ODT for improved

signal integrity.

Operating temperature (ambient)

Standard Grade

Grade W

Operating Humidity

10% to 90% relative humidity, noncondensing

Operating Pressure

105 to 69 kPa (up to 10000 ft.)

Storage Temperature

-55°C to 100°C

Storage Humidity

5% to 95% relative humidity, noncondensing

Storage Pressure

0°C to 70°C

-40°C to 85°C

Refresh. Self Refresh and Power Down Modes.

ZQ Calibration for output driver and ODT.

System Level Timing Calibration Support via Write Leveling

and Multi Purpose Register (MPR) Read Pattern.

Figure: mechanical dimensions¹

1682 PSI (up to 5000 ft.) at 50°C

if no tolerances specified ± 0.15mm

Swissbit AG

Industriestrasse 4

CH-9552 Bronschhofen

Fon: +41 (0) 71 913 03 03

Fax: +41 (0) 71 913 03 15

www.swissbit.com

eMail: info@swissbit.com

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与SGU02G64A1BD1SA-CCR相关器件

型号	品牌	获取价格	描述	数据表
SGU02G64A1BD1SA-DCR	ETC	获取价格	2048MB DDR3 . SDRAM UDIMM
SGU02G72H1BG2SA-BBRT	ETC	获取价格	2048MB DDR3 â SDRAM Ultra Low Profile ECC D
SGU02G72H1BG2SA-CCRT	ETC	获取价格	2048MB DDR3 â SDRAM Ultra Low Profile ECC D
SGU02N60	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251AA, IPAK-3
SGU04G64A1BE1MT-BBR	ETC	获取价格	4096MB DDR3 â SDRAM UDIMM
SGU04G64A1BE1MT-CCR	ETC	获取价格	4096MB DDR3 â SDRAM UDIMM
SGU04G64A1BE1MT-DCR	ETC	获取价格	4096MB DDR3 â SDRAM UDIMM
SGU04G72F1BB1SA-BBRT	ETC	获取价格	4096MB DDR3 . SDRAM ECC UDIMM
SGU04G72F1BB1SA-CCRT	ETC	获取价格	4096MB DDR3 . SDRAM ECC UDIMM
SGU04G72F1BB1SA-DCRT	ETC	获取价格	4096MB DDR3 . SDRAM ECC UDIMM

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