SGU15N40L

更新时间： 2024-02-01 06:12:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	170K
描述
General Description

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数据手册

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SGU15N40L 数据手册

IGBT

SGR15N40L / SGU15N40L

General Description

Features

Insulated Gate Bipolar Transistors (IGBTs) with a trench

gate structure provide superior conduction and switching

performance in comparison with transistors having a planar

gate structure. They also have wide noise immunity. These

devices are very suitable for strobe applications

•

High input impedance

High peak current capability (130A)

Easy gate drive

Application

Strobe flash.

D-PAK

I-PAK

G C E

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Description

SGR / SGU15N40L

Units

Collector - Emitter Voltage

400

± 6

CES

GES

Gate - Emitter Voltage

Pulsed Collector Current

130

CM (1)

M a x i m u m P o w e r D i s s i p a t i o n

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for soldering

purposes, 1/8” from case for 5 seconds

@ T = 25°C

-40 to +150

°C

stg

300

°C

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Units

°C/W

Thermal Resistance, Junction-to-Case

3.0

θJC

(D-PAK)

(I-PAK)

Thermal Resistance, Junction-to-Ambient (PCB Mount)

Thermal Resistance, Junction-to-Ambient

θJA

(2)

110

Notes :

(2) Mounted on 1” square PCB (FR4 or G-10 Material)

SGR15N40L / SGU15N40L Rev. A1

12 3 4 5 6 7

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