SFW9640

更新时间： 2024-09-15 22:21:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	263K
描述
P-CHANNEL POWER MOSFET

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中文翻译

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数据手册

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SFW9640 数据手册

SFW/I9640

Advanced Power MOSFET

FEATURES

BV_DSS= -200 V

R_DS(on)= 0.5 W

I_D= -11 A

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 10 mA (Max.) @ V_DS= -200V

Low R_DS(ON): 0.344 W (Typ.)

D²-PAK

I²-PAK

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (T_C=25^oC)

Continuous Drain Current (T_C=100^oC)

Drain Current-Pulsed

Value

-200

-11

Units

V_DSS

I_D

-7.0

-44

I_DM

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

807

-11

E_AR

dv/dt

Repetitive Avalanche Energy

12.3

-5.0

3.1

V/ns

Peak Diode Recovery dv/dt

Total Power Dissipation (T_A=25 C)

Total Power Dissipation (T_C=25^oC)

Linear Derating Factor

P_D

123

0.98

W/^oC

Operating Junction and

T_J, T_STG

- 55 to +150

300

Storage Temperature Range

^oC

Maximum Lead Temp. for Soldering

Purposes, 1/8 “ from case for 5-seconds

T_L

Thermal Resistance

Symbol

R_qJC

Characteristic

Typ.

Max.

Units

Junction-to-Case

1.02

^oC/W

R_qJA

Junction-to-Ambient

R_qJA

62.5

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

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