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SFW9644TM PDF预览

SFW9644TM

更新时间: 2024-11-06 20:02:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
9页 312K
描述
Power Field-Effect Transistor, 8.6A I(D), 250V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

SFW9644TM 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
雪崩能效等级(Eas):462 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):8.6 A最大漏极电流 (ID):8.6 A
最大漏源导通电阻:0.8 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):123 W最大脉冲漏极电流 (IDM):34 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SFW9644TM 数据手册

 浏览型号SFW9644TM的Datasheet PDF文件第2页浏览型号SFW9644TM的Datasheet PDF文件第3页浏览型号SFW9644TM的Datasheet PDF文件第4页浏览型号SFW9644TM的Datasheet PDF文件第5页浏览型号SFW9644TM的Datasheet PDF文件第6页浏览型号SFW9644TM的Datasheet PDF文件第7页 
SFW/I9644  
Advanced Power MOSFET  
FEATURES  
BVDSS = -250 V  
RDS(on) = 0.8 W  
ID = -8.6 A  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
Improved Gate Charge  
Extended Safe Operating Area  
Lower Leakage Current : 10 mA (Max.) @ VDS = -250V  
Low RDS(ON) : 0.549 W (Typ.)  
D2-PAK  
I2-PAK  
2
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Drain-to-Source Voltage  
Continuous Drain Current (TC=25oC)  
Continuous Drain Current (TC=100oC)  
Drain Current-Pulsed  
Value  
-250  
-8.6  
Units  
VDSS  
V
ID  
A
-5.4  
IDM  
VGS  
EAS  
IAR  
1
-34  
A
V
O
+
_
Gate-to-Source Voltage  
30  
2
Single Pulsed Avalanche Energy  
Avalanche Current  
462  
-8.6  
12.3  
-4.8  
3.1  
mJ  
A
O
1
O
EAR  
dv/dt  
Repetitive Avalanche Energy  
1
mJ  
V/ns  
W
O
3
Peak Diode Recovery dv/dt  
O
o
*
Total Power Dissipation (TA=25 C)  
Total Power Dissipation (TC=25oC)  
Linear Derating Factor  
PD  
123  
0.98  
W
W/oC  
Operating Junction and  
TJ , TSTG  
- 55 to +150  
300  
Storage Temperature Range  
oC  
Maximum Lead Temp. for Soldering  
Purposes, 1/8 “ from case for 5-seconds  
TL  
Thermal Resistance  
Symbol  
RqJC  
Characteristic  
Typ.  
Max.  
Units  
Junction-to-Case  
--  
--  
--  
1.02  
40  
oC/W  
RqJA  
*
Junction-to-Ambient  
Junction-to-Ambient  
RqJA  
62.5  
*
When mounted on the minimum pad size recommended (PCB Mount).  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

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