是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-262AA | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
雪崩能效等级(Eas): | 143 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (Abs) (ID): | 1.8 A |
最大漏极电流 (ID): | 1.75 A | 最大漏源导通电阻: | 3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-262AA |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 20 W |
最大脉冲漏极电流 (IDM): | 7 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SFI9614 | FAIRCHILD |
获取价格 |
ADVANCED POWER MOSFET | |
SFI9620 | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
SFI9620TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met | |
SFI9624 | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
SFI9630 | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
SFI9630TLTU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met | |
SFI9630TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Met | |
SFI9640 | FAIRCHILD |
获取价格 |
P-CHANNEL POWER MOSFET | |
SFI9640 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta | |
SFI9640TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta |