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SFI9Z24 PDF预览

SFI9Z24

更新时间: 2024-11-04 21:54:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
7页 280K
描述
Advanced Power MOSFET

SFI9Z24 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N雪崩能效等级(Eas):161 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):9.7 A
最大漏极电流 (ID):9.7 A最大漏源导通电阻:0.28 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):49 W
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SFI9Z24 数据手册

 浏览型号SFI9Z24的Datasheet PDF文件第2页浏览型号SFI9Z24的Datasheet PDF文件第3页浏览型号SFI9Z24的Datasheet PDF文件第4页浏览型号SFI9Z24的Datasheet PDF文件第5页浏览型号SFI9Z24的Datasheet PDF文件第6页浏览型号SFI9Z24的Datasheet PDF文件第7页 
SFW/I9Z24  
Advanced Power MOSFET  
FEATURES  
BVDSS = -60 V  
n Avalanche Rugged Technology  
n Rugged Gate Oxide Technology  
n Lower Input Capacitance  
RDS(on) = 0.28  
ID = -9.7 A  
n Improved Gate Charge  
n Extended Safe Operating Area  
n 175oC Operating Temperature  
n Lower Leakage Current : 10 µA (Max.) @ VDS = -60V  
n Low RDS(ON) : 0.206 (Typ.)  
D2-PAK  
I2-PAK  
2
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
-60  
Units  
VDSS  
Drain-to-Source Voltage  
V
Continuous Drain Current (TC=25oC)  
Continuous Drain Current (TC=100oC)  
Drain Current-Pulsed  
-9.7  
-6.8  
-40  
ID  
A
IDM  
VGS  
EAS  
IAR  
1
A
V
O
Gate-to-Source Voltage  
±30  
161  
-9.7  
4.9  
Single Pulsed Avalanche Energy  
Avalanche Current  
2
mJ  
A
O
1
O
EAR  
dv/dt  
Repetitive Avalanche Energy  
1
mJ  
V/ns  
W
O
3
Peak Diode Recovery dv/dt  
-5.5  
3.8  
O
o
*
Total Power Dissipation (TA=25 C)  
Total Power Dissipation (TC=25oC)  
Linear Derating Factor  
PD  
49  
W
W/oC  
0.33  
Operating Junction and  
TJ , TSTG  
- 55 to +175  
300  
Storage Temperature Range  
oC  
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from case for 5-seconds  
TL  
Thermal Resistance  
Symbol  
Characteristic  
Typ.  
Max.  
Units  
RθJC  
Junction-to-Case  
Junction-to-Ambient  
Junction-to-Ambient  
--  
--  
--  
3.06  
40  
oC/W  
RθJA  
RθJA  
*
62.5  
* When mounted on the minimum pad size recommended (PCB Mount).  
Rev. C  

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