5秒后页面跳转
SFI9520 PDF预览

SFI9520

更新时间: 2024-11-05 21:54:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管脉冲
页数 文件大小 规格书
7页 228K
描述
Advanced Power MOSFET

SFI9520 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
雪崩能效等级(Eas):144 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):6 A
最大漏极电流 (ID):6 A最大漏源导通电阻:0.6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):49 W
最大脉冲漏极电流 (IDM):24 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SFI9520 数据手册

 浏览型号SFI9520的Datasheet PDF文件第2页浏览型号SFI9520的Datasheet PDF文件第3页浏览型号SFI9520的Datasheet PDF文件第4页浏览型号SFI9520的Datasheet PDF文件第5页浏览型号SFI9520的Datasheet PDF文件第6页浏览型号SFI9520的Datasheet PDF文件第7页 
SFW/I9520  
Advanced Power MOSFET  
FEATURES  
BVDSS = -100 V  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
RDS(on) = 0.6  
ID = -6.0 A  
Improved Gate Charge  
Extended Safe Operating Area  
175oC Operating Temperature  
Lower Leakage Current : 10 µA (Max.) @ VDS = -100V  
Low RDS(ON) : 0.444 (Typ.)  
D2-PAK  
I2-PAK  
2
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
-100  
-6.0  
-4.0  
-24  
Units  
VDSS  
Drain-to-Source Voltage  
V
Continuous Drain Current (TC=25oC)  
Continuous Drain Current (TC=100oC)  
Drain Current-Pulsed  
ID  
A
1
IDM  
VGS  
EAS  
IAR  
A
V
O
Gate-to-Source Voltage  
±30  
144  
-6.0  
4.9  
2
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
O
1
O
1
EAR  
dv/dt  
Repetitive Avalanche Energy  
mJ  
V/ns  
W
O
3
Peak Diode Recovery dv/dt  
-6.5  
3.8  
O
o
*
Total Power Dissipation (TA=25 C)  
Total Power Dissipation (TC=25oC)  
Linear Derating Factor  
PD  
49  
W
W/oC  
0.33  
Operating Junction and  
TJ , TSTG  
- 55 to +175  
300  
Storage Temperature Range  
oC  
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from case for 5-seconds  
TL  
Thermal Resistance  
Symbol  
Characteristic  
Typ.  
Max.  
Units  
RθJC  
Junction-to-Case  
Junction-to-Ambient  
Junction-to-Ambient  
--  
--  
--  
3.06  
40  
oC/W  
RθJA  
RθJA  
*
62.5  
* When mounted on the minimum pad size recommended (PCB Mount).  
Rev. C  

与SFI9520相关器件

型号 品牌 获取价格 描述 数据表
SFI9530 FAIRCHILD

获取价格

Advanced Power MOSFET
SFI9530TU FAIRCHILD

获取价格

Power Field-Effect Transistor, 10.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Me
SFI9540 FAIRCHILD

获取价格

P-CHANNEL POWER MOSFET
SFI9540TU FAIRCHILD

获取价格

Power Field-Effect Transistor, 17A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta
SFI9610 FAIRCHILD

获取价格

Advanced Power MOSFET
SFI9610TU FAIRCHILD

获取价格

Power Field-Effect Transistor, 1.75A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Meta
SFI9614 FAIRCHILD

获取价格

ADVANCED POWER MOSFET
SFI9620 FAIRCHILD

获取价格

Advanced Power MOSFET
SFI9620TU FAIRCHILD

获取价格

Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Met
SFI9624 FAIRCHILD

获取价格

Advanced Power MOSFET