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SFI9610 PDF预览

SFI9610

更新时间: 2024-11-05 21:53:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关脉冲
页数 文件大小 规格书
7页 253K
描述
Advanced Power MOSFET

SFI9610 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
Is Samacsys:N雪崩能效等级(Eas):143 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):1.8 A最大漏极电流 (ID):1.75 A
最大漏源导通电阻:3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):20 W最大脉冲漏极电流 (IDM):7 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SFI9610 数据手册

 浏览型号SFI9610的Datasheet PDF文件第2页浏览型号SFI9610的Datasheet PDF文件第3页浏览型号SFI9610的Datasheet PDF文件第4页浏览型号SFI9610的Datasheet PDF文件第5页浏览型号SFI9610的Datasheet PDF文件第6页浏览型号SFI9610的Datasheet PDF文件第7页 
SFW/I9610  
Advanced Power MOSFET  
FEATURES  
BVDSS = -200 V  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
W
RDS(on) = 3.0  
ID = -1.75 A  
Improved Gate Charge  
Extended Safe Operating Area  
Lower Leakage Current : 10 mA (Max.) @ VDS = -200V  
Low RDS(ON) : 2.084 W (Typ.)  
D2-PAK  
I2-PAK  
2
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Drain-to-Source Voltage  
Value  
-200  
Units  
VDSS  
V
Continuous Drain Current (TC=25oC)  
Continuous Drain Current (TC=100oC)  
Drain Current-Pulsed  
-1.75  
-1.0  
ID  
A
IDM  
VGS  
EAS  
IAR  
1
-7.0  
A
V
O
+
_
Gate-to-Source Voltage  
30  
2
Single Pulsed Avalanche Energy  
Avalanche Current  
143  
-1.75  
2.0  
mJ  
A
O
1
O
EAR  
dv/dt  
Repetitive Avalanche Energy  
1
mJ  
V/ns  
W
O
Peak Diode Recovery dv/dt  
3
O
-5.0  
3.1  
o
*
Total Power Dissipation (TA=25 C)  
Total Power Dissipation (TC=25oC)  
Linear Derating Factor  
PD  
20  
W
W/oC  
0.16  
Operating Junction and  
TJ , TSTG  
- 55 to +150  
300  
Storage Temperature Range  
oC  
Maximum Lead Temp. for Soldering  
1/8”  
TL  
Purposes,  
from case for 5-seconds  
Thermal Resistance  
Symbol  
RqJC  
Characteristic  
Typ.  
Max.  
Units  
Junction-to-Case  
--  
--  
--  
6.25  
40  
oC/W  
RqJA  
*
Junction-to-Ambient  
Junction-to-Ambient  
RqJA  
62.5  
*
When mounted on the minimum pad size recommended (PCB Mount).  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

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