Datasheet > SFF240JDBRTXV

SFF240JDBRTXV

更新时间： 2024-11-18 18:56:59

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
3页	155K
描述
Power Field-Effect Transistor

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技术参数
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SFF240JDBRTXV 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.63
Base Number Matches：	1

SFF240JDBRTXV 数据手册

SFF240J

SFF240JR

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

15 AMP, 200 Volts, 0.18 Ω

N-Channel Power MOSFET

SFF240J___ ___ ___

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└

│

└

Features:



Rugged construction with polysilicon gate

Low R_DS(on)and high transconductance

Excellent high temperature stability

Very fast switching speed

Fast recovery and superior dv/dt performance

Increased reverse energy capability

Low input and transfer capacitance for easy

paralleling

Pin Configuration

__ = Normal

R = Reverse

Lead Bend

__ = Straight

UB = Up Bend

DB = Down Bend



Available with Ceramic Seal. Consult Factory

Hermetically Sealed Isolated Power Package

TX, TXV, S-Level screening available

Replaces: IRFY240 and 2N7219 Types

Maximum Ratings

Symbol

V_DS

Value

Units

Drain - Source Voltage

200

continuous

transient

±20

±30

Gate - Source Voltage

V_GS

I_D1

Max. Continuous Drain Current (package

limited) @ 25°C

Max. Instantaneous Drain Current (T_Jlimited)

T_C= 25°C

I_D2

Max. Avalanche current

@ L = 0.1 mH

I_AS

Single Pulse Avalanche Energy

E_AS

450

@ T_C= 25°C

@ T_C= 55°C

Total Power Dissipation

°C

P_D

T_OP& T_STG

R_θJC

Operating & Storage Temperature

-55 to +150

Maximum Thermal Resistance

(Junction to Case)

°C/W

NOTES:

TO-257

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Maximum current limited by package configuration

4/ Unless otherwise specified, all electrical characteristics @ 25°C.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00111C

DOC

12 3

中文翻译

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与SFF240JDBRTXV相关器件

型号	品牌	获取价格	描述	数据表
SFF240JDBS	SSDI	获取价格	暂无描述
SFF240JDBTX	SSDI	获取价格	Power Field-Effect Transistor
SFF240JGZ	SSDI	获取价格	Transistor
SFF240JR	SSDI	获取价格	N-Channel Power MOSFET
SFF240JRS	SSDI	获取价格	Power Field-Effect Transistor, 15A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
SFF240JRTX	SSDI	获取价格	Power Field-Effect Transistor, 15A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
SFF240JRTXV	SSDI	获取价格	Power Field-Effect Transistor, 15A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
SFF240JS	SSDI	获取价格	Power Field-Effect Transistor, 15A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
SFF240JTX	SSDI	获取价格	Power Field-Effect Transistor, 15A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
SFF240JTXV	SSDI	获取价格	Power Field-Effect Transistor, 15A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Met

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