Datasheet > SFF10N100ZDB

SFF10N100ZDB

更新时间： 2024-02-24 02:14:26

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	148K
描述
Power Field-Effect Transistor

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技术参数
数据手册

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SFF10N100ZDB 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.65
Base Number Matches：	1

SFF10N100ZDB 数据手册

SFF10N100M

SFF10N100Z

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

10 Amps , 1000 Volts, 1.2 Ω

N-channel Power MOSFET

SFF10N100 ___ ___ ___

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└

│

└

Features:

Rugged poly-Si gate



Low R_DS(on)and high transconductance

Excellent high temperature stability

Very fast switching speed

Fast recovery and superior dv/dt performance

Increased reverse energy capability

Low input and transfer capacitance for easy

paralleling

Lead Option ^3/

__ = Straight Leads

DB = Down Bend

UB = Up Bend

Package ^{3/ 4/}

M = TO-254



Available in ceramic seals for improved

Hermeticity

Z = TO-254Z



Hermetically sealed power package.

TX, TXV, S-Level screening available

Replaces: IXTH10N100 types

Maximum Ratings

Symbol

V_DS

Value

1000

±20

Units

Drain – Source Voltage

Gate – Source Voltage

Continuous Drain Current

V_GS

I_D

T_C= 25°C

T_C= 55°C

150

144

Total Power Dissipation

P_D

T_OP& T_STG

R_θJC

°C

Operating & Storage Temperature

-55 to +150

Maximum Thermal Resistance

Junction to Case

0.83

°C/W

NOTES:

TO-254

TO-254Z

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available

on request.

3/ For package outlines / lead bending options / pinout

configurations - contact factory.

4/ Maximum current limited by package configuration

5/ Unless otherwise specified, all electrical characteristics @ 25°C.

6/ Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00177E

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与SFF10N100ZDB相关器件

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SFF10N100ZDBS	SSDI	获取价格	暂无描述
SFF10N100ZDBTX	SSDI	获取价格	Power Field-Effect Transistor
SFF10N100ZDBTXV	SSDI	获取价格	Power Field-Effect Transistor
SFF10N100ZS	SSDI	获取价格	Power Field-Effect Transistor
SFF10N100ZTX	SSDI	获取价格	Power Field-Effect Transistor
SFF10N100ZTXV	SSDI	获取价格	Power Field-Effect Transistor
SFF10N100ZUB	SSDI	获取价格	Power Field-Effect Transistor
SFF10N100ZUBS	SSDI	获取价格	Power Field-Effect Transistor
SFF10N100ZUBTX	SSDI	获取价格	Power Field-Effect Transistor
SFF10N100ZUBTXV	SSDI	获取价格	Power Field-Effect Transistor