Datasheet > SFF10N60

SFF10N60

更新时间： 2024-09-26 06:11:15

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描述
Silicon N-Channel MOSFET

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SFF10N60 数据手册

SFF10N60

Silicon N-Channel MOSFET

Features

�

10A,600V ,R_DS(on)(Max0.75Ω)@V_GS=10V

Ultra-low Gate Charge(34nC)

Fast Switching Capability

100%Avalanche Tested

Improved dv/dt capability

General Description

This Power MOSFET is produced using Winsemi's advanced

planar stripe,DMOS technology. This latest technology has been

especially designed to minimize on -state resistance,have a high

rugged avalanche characteristics. This devices is specially well

suited for high efficiency switch model power supplies , power

factor correction ,UPS and a electronic lamp ballast base on half

bridge.

Absolute Maximum Ratings

Symbol

Parameter

Value

600

10*

Units

V_DSS

Drain Source Voltage

Continuous Drain Current (@Tc=25℃)

Continuous Drain Current (@Tc=100℃)

Drain Current Pulsed

I_D

6.0*

40*

I_DM

(Note1)

V_GS

E_AS

E_AR

dv/dt

Gate to Source Voltage

±30

713

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (@Tc=25℃)

Derating Factor above25℃

(Note2)

(Note1)

(Note3)

V/ns

4.5

P_D

0.4

W/℃

℃

T_J,T_stg

T_L

Junction and Storage Temperature

Channel Temperature

-55~150

300

℃

*Drain current limited by maximum junction temperature

Thermal Characteristics

Value

Symbol

Parameter

Units

Min

Typ

Max

2.5

R_QJC

R_QJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

℃/W

62.5

Rev.A Aug.2010

12 3 4 5 6 7

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