Datasheet > SFF10N60

SFF10N60

更新时间： 2024-01-28 15:21:17

品牌	Logo	应用领域
SEMIWELL		/
页数	文件大小	规格书
3页	99K
描述
N-Channel MOSFET

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中文翻译

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数据手册

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SFF10N60 数据手册

ꢀ

SemiWell Semiconductorꢀ

SFF10N60

N-Channel MOSFET

Features

◆ꢀ R_DS(ON)ꢀMaxꢀ0.75ꢀohmꢀatꢀV_GSꢀ=ꢀ10Vꢀ

◆ꢀ GateꢀChargeꢀ(ꢀTypicalꢀ48ꢀnC)ꢀ

◆ꢀ Improveꢀdv/dtꢀcapability,ꢀFastꢀswitchingꢀ

◆ꢀ 100%ꢀavalancheꢀTestedꢀ

General Description

Thisꢀ MOSFETꢀ isꢀ producedꢀ usingꢀ advancedꢀ planarꢀ stripꢀ

DMOSꢀ technology.ꢀ Thisꢀ latestꢀ technologyꢀ hasꢀ beenꢀ

especiallyꢀ designedꢀ toꢀ minimizeꢀ onꢁstateꢀ resistanceꢀ haveꢀ aꢀ

highꢀruggedꢀavalancheꢀcharacteristics.ꢀTheseꢀdeviceꢀareꢀwellꢀ

suitedꢀ forꢀ highꢀ efficiencyꢀ switchꢀ modeꢀ powerꢀ supplyꢀ activeꢀ

powerꢀfactorꢀcorrection.ꢀElectronicꢀlampꢀbasedꢀonꢀhalfꢀbridgeꢀ

topology

AbsoluteꢀMaximumꢀRatingsꢀ(T_Jꢀ=ꢀ25℃ unless otherwise specified)ꢀ

ꢀ

Symbolꢀ

Parameterꢀ

Ratingsꢀ

Unitsꢀ

Vꢀ

V_DSS

I_Dꢀ

ꢀ

DrainꢁSourceꢀVoltageꢀ

600ꢀ

10ꢀ

DrainꢀCurrentꢀ ꢀ T_C=25℃

Aꢀ

T_C=100℃ꢀ

GateꢁSourceꢀVoltageꢀ

6.0ꢀ

V_GSS

ꢀ

±ꢀ 30ꢀ

40ꢀ

Vꢀ

Aꢀ

I_DM

E_AS

E_AR

ꢀ

DrainꢀCurrentꢀ ꢀ pulseꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ1)ꢀ

SingleꢀPulseꢀAvalancheꢀEnergyꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ2)ꢀ

RepetitiveꢀAvalancheꢀEnergyꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ1)ꢀ ꢀ

PeakꢀdiodeꢀRecoveryꢀdv/dtꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ3)ꢀ

PowerꢀDissipationꢀT_C=25℃ꢀ

ꢀ

709ꢀ

mJꢀ

V/nsꢀ

Wꢀ

ꢀ

16.2ꢀ

4.5ꢀ

dv/dtꢀ

P_Dꢀ

52ꢀ

T_j,ꢀT_STG

ꢀ

OperationꢀandꢀStorageꢀTemperatureꢀrangeꢀ

ꢁ45ꢀ~ꢀ150ꢀ

℃ꢀ

12 3

中文翻译

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