SFF110P05J
SFF110P05M
SFF110P05S1
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information1/
RADIATION TOLERANT
110 AMP , 50 Volts, 14 mΩ
Avalanche Rated P-MOSFET
SFF110P05 ___ ___ ____
Screening2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
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Features:
Rugged Trench Technology
Lead Option
__ = Straight Leads
DB = Down Bend
UB = Up Bend
Lowest ON-resistance in the industry: 10mΩ typ
Radiation tolerant: less than 0.5V typical gate
threshold shift @ TID= 100kRAD
SEU and SEGR resistant to LET 38
Avalanche rated
Package3/
M = TO-254
J = TO-257
S1 = SMD1
Hermetically Sealed Power Packaging
Low Total Gate Charge
Maximum Ratings
Symbol
VDSS
Value
Units
V
Drain - Source Voltage
-50
continuous
transient
±20
±30
Gate - Source Voltage
VGS
V
A
A
TO-257
TO-254
SMD1
30
55
85
Max. Continuous Drain Current (package
limited) @ 25ºC
ID1
Max. Instantaneous Drain Current (Tj limited)
TC = 25ºC
TO-257, TO-254
SMD1
ID2
ID3
80
110
Max. Avalanche current
@ L = 0.1 mH
@ L = 0.1 mH
IAS
70
A
Single Pulse Avalanche Energy
EAS
1000
mJ
TO-257, TO-254
SMD1
90
125
Total Power Dissipation @ TC = 25ºC
Operating & Storage Temperature
W
ºC
PD
TOP & TSTG
RθJC
-55 to +150
Maximum Thermal Resistance
(Junction to Case)
TO-257, TO-254
SMD1
1.4
1 (typ.0.5)
ºC/W
NOTES:
TO-254
TO-257
SMD1
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability -
contact factory.
2/ Screening based on MIL-PRF-19500. Screening
flows available on request.
3/ Maximum current limited by package configuration
4/ Unless otherwise specified, all electrical
characteristics @25oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0042A
DOC