SFF116N10M

更新时间： 2024-02-17 16:10:00

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	114K
描述
Avalanche Rated N-channel MOSFET

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SFF116N10M 数据手册

SFF116N10M

SFF116N10Z

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

116 AMP , 100 Volts, 15 mΩ

Avalanche Rated N-channel

MOSFET

Part Number / Ordering Information ^1/

SFF116N10 ___ ___ ____

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└

│

└

Features:

Rugged poly-Si gate

Lead Option ^3/

__ = Straight Leads

DB = Down Bend

UB = Up Bend

•

Lowest ON-resistance in the industry

Avalanche rated

Hermetically Sealed, Isolated Package

Low Total Gate Charge

Fast Switching

TX, TXV, S-Level screening available

Improved (R_DS(ON)Q_G) figure of merit

Package ^{3/ 4/}

M = TO-254

Z = TO-254Z

Maximum Ratings

Symbol

V_DSS

Value

Units

Drain - Source Voltage

Gate – Source Voltage

100

±20

±30

continuous

transient

V_GS

I_D1

Max. Continuous Drain Current (package

limited)

@ T_C= 25ºC

@ T_C= 175ºC

I_D2

I_D3

116

Max. Instantaneous Drain Current (Tj limited)

Max. Avalanche current

I_AR

@ L= 0.1 mH

@ T_C= 25ºC

E_AS

E_AR

2500

Single and Repetitive Avalanche Energy

Total Power Dissipation

P_D

150

Operating & Storage Temperature

ºC

-55 to +175

T_OP& T_STG

Maximum Thermal Resistance

(Junction to Case)

1.0

(typ.0.75)

R_θJC

ºC /W

NOTES:

TO-254

TO-254Z

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact

factory.

2/ Screening based on MIL-PRF-19500. Screening flows

available on request.

3/ For package outlines / lead bending options / pinout

configurations - contact factory.

4/ Maximum current limited by package configuration

5/ Unless otherwise specified, all electrical characteristics

@25^oC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0037B

DOC

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与SFF116N10M相关器件

型号	品牌	获取价格	描述	数据表
SFF116N10MDB	SSDI	获取价格	Power Field-Effect Transistor, 55A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me
SFF116N10MDBS	SSDI	获取价格	暂无描述
SFF116N10MDBTX	SSDI	获取价格	Power Field-Effect Transistor, 55A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me
SFF116N10MDBTXV	SSDI	获取价格	Power Field-Effect Transistor, 55A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me
SFF116N10MTX	SSDI	获取价格	Power Field-Effect Transistor, 55A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me
SFF116N10MTXV	SSDI	获取价格	Power Field-Effect Transistor, 55A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me
SFF116N10MUB	SSDI	获取价格	Power Field-Effect Transistor, 55A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me
SFF116N10MUBTX	SSDI	获取价格	Power Field-Effect Transistor, 55A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me
SFF116N10MUBTXV	SSDI	获取价格	Power Field-Effect Transistor, 55A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me
SFF116N10Z	SSDI	获取价格	Avalanche Rated N-channel MOSFET

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