生命周期: | Active | 零件包装代码: | TO-254Z |
包装说明: | FLANGE MOUNT, S-XSFM-P3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.1 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 2500 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 55 A | 最大漏源导通电阻: | 0.015 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | S-XSFM-P3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | UNSPECIFIED |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SFF116Z10ZDBTX | SSDI |
获取价格 |
Power Field-Effect Transistor, 55A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me | |
SFF116Z10ZDBTXV | SSDI |
获取价格 |
Power Field-Effect Transistor, 55A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me | |
SFF116Z10ZS | SSDI |
获取价格 |
Power Field-Effect Transistor, 55A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me | |
SFF116Z10ZTX | SSDI |
获取价格 |
Power Field-Effect Transistor, 55A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me | |
SFF116Z10ZTXV | SSDI |
获取价格 |
Power Field-Effect Transistor, 55A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me | |
SFF116Z10ZUBTX | SSDI |
获取价格 |
Power Field-Effect Transistor, 55A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me | |
SFF116Z10ZUBTXV | SSDI |
获取价格 |
Power Field-Effect Transistor, 55A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Me | |
SFF11N80 | SSDI |
获取价格 |
11 AMP / 800 Volts 0.95 ヘ N-Channel MOSFET | |
SFF11N80B | SSDI |
获取价格 |
11 AMP / 800 Volts 0.95 ohm N-Channel Power MOSFET | |
SFF11N80MDB | SSDI |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Met |