Datasheet > SFF11N80MDBS

SFF11N80MDBS

更新时间： 2023-01-15 00:00:00

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	136K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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SFF11N80MDBS 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.64
Base Number Matches：	1

SFF11N80MDBS 数据手册

SFF11N80 Series

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

11 AMP / 800 Volts

0.95 Ω

Part Number / Ordering Information ^1/

SFF11N80 __ __ __

N-Channel MOSFET

Screening ^2/__ = Not Screen

TX = TX Level

│

└

│

└

TXV = TXV Level

S = S Level

Features:

Lead Option ^3/__ = Straight Leads

DB = Down Bend

• Rugged Construction with Polysilicon Gate Cell

• Low R_DS(ON)and High Transconductance

• Excellent High Temperature Stability

• Very Fast Switching Speed

• Fast Recovery and Superior dV/dt performance

• Increased Reverse Energy Capability

UB = Up Bend

Package ^3/M = TO-254

Z = TO-254Z

• Low Input and Transfer Capacitance for Easy Paralleling

• Hermetically Sealed, Isolated Package

• Ceramic Seal Package Available. Contact Factory

• TX, TXV, S-Level screening available

• Replacement for IXTH11N80 Types

Maximum Ratings

Symbol

Value

Units

Drain – Source Voltage

Gate – Source Voltage

V_DS

V_GS

I_D

800

±20

Volts

Amps

Continues Collector Current

150

114

T_C= 25ºC

T_C= 55ºC

Power Dissipation

P_D

Top & Tstg

R_θJC

ºC

Operating & Storage Temperature

-55 to +175

Maximum Thermal Resistance

0.83

ºC/W

Junction to Case

TO-254 (M)

TO-254Z (Z)

NOTE: All specifications are subject to change without notification.

DATA SHEET #: F00213C

DOC

SCD's for these devices should be reviewed by SSDI prior to release.

中文翻译

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