生命周期: | Active | 零件包装代码: | LCC |
包装说明: | CHIP CARRIER, S-CQCC-N28 | 针数: | 28 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.72 | 配置: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 9.2 A |
最大漏源导通电阻: | 0.35 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | S-CQCC-N28 | 元件数量: | 4 |
端子数量: | 28 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | SQUARE |
封装形式: | CHIP CARRIER | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | QUAD |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SFF120AAGZ | SSDI |
获取价格 |
Transistor | |
SFF120C | SSDI |
获取价格 |
Transistor | |
SFF120CGZ | SSDI |
获取价格 |
Transistor | |
SFF120J | SSDI |
获取价格 |
Transistor | |
SFF120M | SSDI |
获取价格 |
Transistor | |
SFF120N10S1 | SSDI |
获取价格 |
Power Field-Effect Transistor, | |
SFF120N10S1S | SSDI |
获取价格 |
Power Field-Effect Transistor, | |
SFF120N10S1TX | SSDI |
获取价格 |
Power Field-Effect Transistor, | |
SFF120T | SSDI |
获取价格 |
Transistor | |
SFF120TGZ | SSDI |
获取价格 |
Transistor |