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SFF1305 PDF预览

SFF1305

更新时间: 2024-09-30 15:50:59
品牌 Logo 应用领域
SSDI 开关晶体管
页数 文件大小 规格书
2页 171K
描述
Power Field-Effect Transistor, 8A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-5, HERMATIC SEALED PACKAGE-3

SFF1305 技术参数

生命周期:Active零件包装代码:TO-5
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.68
Is Samacsys:N雪崩能效等级(Eas):75 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):8 A最大漏源导通电阻:0.21 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-5
JESD-30 代码:O-MBCY-W3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SFF1305 数据手册

 浏览型号SFF1305的Datasheet PDF文件第2页 
SFF130/5  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
8 AMP / 100 Volts  
0.18 Ω  
Part Number / Ordering Information 1/  
SFF130 __ __  
N-Channel Power MOSFET  
Screening 2/  
__ = Not Screen  
TX = TX Level  
TXV = TXV Level  
S = S Level  
Features:  
Rugged Construction with Poly Silicon Gate  
Low RDS(ON) and High Transconductance  
Excellent High Temperature Stability  
Very Fast Switching Speed  
Package  
/5= TO-5  
Fast Recovery and Superior dV/dt Performance  
Increased Reverse Energy Capability  
Low Input and Transfer Capacitance for Easy Paralleling  
Hermetically Sealed Package  
Available in both hot case and isolated versions  
Ideal for low power applications  
2/  
TX, TXV, Space Level Screening Available  
Replacement for IRFF130 Types  
TO-5  
Maximum Ratings 3/  
Symbol  
Value  
Units  
Drain – Source Voltage  
Gate – Source Voltage  
VDS  
VGS  
100  
±20  
Volts  
Volts  
TC = 25ºC  
8
Continuous Collector Current  
ID  
Amps  
TC = 100ºC  
5
TC = 25ºC  
25  
19  
Power Dissipation  
PD  
Watts  
ºC  
TA = 25ºC  
Operating & Storage Temperature  
Top & Tstg  
-55 to +150  
Thermal Resistance  
5
ºC/W  
mJ  
RθJC  
EAS  
Junction to Case  
Single Pulse Avalanche Energy  
75  
NOTES:  
TO-5 Case Outline:  
1/ For Ordering Information, Price, Operating  
Curves, and Availability- Contact Factory.  
2/ Screened to MIL-PRF-19500.  
3/ Unless Otherwise Specified, All Maximum  
Ratings and Electrical Characteristics @25ºC.  
NOTE: All specifications are subject to change without notification.  
DATA SHEET #: F00019D  
DOC  
SCD's for these devices should be reviewed by SSDI prior to release.  

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