SFF120N10S1
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
120 AMP , 100 Volts, 5 mΩ
High Operating Temperature
Avalanche Rated N-Channel
MOSFET
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF120N10 ___ ___
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
│
│
│
│
│
└
└
Features:
•
Rugged Poly-Si Gate
•
•
•
•
•
•
•
Lowest ON-Resistance in the Industry
Extended Operating Temperature Range
Avalanche Rated
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Package 3/ 4/
S1 = SMD1
Fast Switching
TX, TXV, S-Level Screening Available
Maximum Ratings
Symbol
VDSS
Value
Unit
V
Drain – Source Voltage
Gate – Source Voltage
100
±20
±30
continuous
transient
VGS
ID1
V
A
A
Max. Continuous Drain Current
(package limited)
55
@ TC = 25°C
@ TC = 25°C
@ TC = 175°C
ID2
ID3
120
80
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
@ L= 0.1 mH
@ L= 0.1 mH
@ TC = 25°C
IAR
EAS
60
1000
A
mJ
W
Single Avalanche Energy
Total Power Dissipation
175
PD
Operating & Storage Temperature
-55 to +175
°C
TOP & TSTG
Maximum Thermal Resistance
(Junction to Case)
RθJC
1.0 (typ.0.5)
°C/W
NOTES:
SMD1 (S1)
*Pulse Test: Pulse Width = 300 µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on
request.
3/ For package outlines / lead bending options / pinout configurations -
contact factory.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics @25°C.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0039D
DOC