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SFF130/66TXV PDF预览

SFF130/66TXV

更新时间: 2024-02-29 20:27:48
品牌 Logo 应用领域
SSDI 局域网开关晶体管
页数 文件大小 规格书
2页 120K
描述
Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-66, HERMETICALLY SEALED PACKAGE-2

SFF130/66TXV 技术参数

生命周期:Active零件包装代码:TO-66
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.65
雪崩能效等级(Eas):75 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):14 A最大漏源导通电阻:0.21 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-66
JESD-30 代码:O-MBFM-P2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SFF130/66TXV 数据手册

 浏览型号SFF130/66TXV的Datasheet PDF文件第2页 
SFF130/3 & SFF130/66  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
14 AMP / 100 Volts  
0.18 Ω  
SFF130__ __  
Screening 2/  
__ = Not Screen  
N-Channel Power MOSFET  
TX = TX Level  
TXV = TXV Level  
S = S Level  
Features:  
Rugged Construction with Poly Silicon Gate  
Low RDS(ON) and High Transconductance  
Excellent High Temperature Stability  
Very Fast Switching Speed  
Package  
/3= TO-3  
/66= TO-66  
Fast Recovery and Superior dV/dt Performance  
Increased Reverse Energy Capability  
Low Input and Transfer Capacitance for Easy Paralleling  
Hermetically Sealed Package  
TO-66  
TO-3  
Available in both hot case and isolated versions  
Ideal for low power applications  
2/  
TX, TXV, Space Level Screening Available  
Replacement for IRFF130 & 2N6756 Types  
Maximum Ratings 3/  
Drain – Source Voltage  
Gate – Source Voltage  
Symbol  
VDS  
Value  
100  
Units  
Volts  
Volts  
VGS  
±20  
TC = 25ºC  
TC = 100ºC  
14  
9
Continuous Collector Current  
Power Dissipation  
ID  
Amps  
Watts  
TC = 25ºC  
TA = 25ºC  
25  
19  
PD  
Operating & Storage Temperature  
Top & Tstg  
RθJC  
-55 to +150  
5
ºC  
Thermal Resistance Junction to Case  
ºC/W  
Single Pulse Avalanche Energy  
EAS  
EAR  
75  
mJ  
mJ  
Repetitive Avalanche Energy  
7.5  
TO-66  
TO-3  
.165  
.151  
.675  
.655  
.135 MAX  
2x Ø  
.525 MAX  
2x R.188 MAX  
SEATING PLANE  
.043  
2x  
.038  
2
Ø.875  
MAX  
.440  
.420  
.225  
.205  
2x  
1
.450  
.250  
1.197  
1.177  
2x .312 MIN  
NOTES: 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.  
2/ Screened to MIL-PRF-19500/542.  
3/ Unless Otherwise Specified, All Maximum Ratings and Electrical Characteristics @25ºC.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: F00307B  
DOC  

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