Datasheet > SEMIX252GB126HDS_11

SEMIX252GB126HDS_11

更新时间： 2022-10-24 17:17:13

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	603K
描述
Trench IGBT Modules

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SEMIX252GB126HDS_11 数据手册

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SEMiX252GB126HDs

Characteristics

Symbol Conditions

Inverse diode

min.

typ.

max.

Unit

I_F= 150 A

T_j= 25 °C

V_F= V_EC

1.6

1.80

1.8

_GE= 0 V

T_j= 125 °C

chip

T_j= 25 °C

T_j= 125 °C

T_j= 25 °C

T_j= 125 °C

V_F0

r_F

0.9

0.7

3.3

4.7

1.1

0.9

4.7

6.0

m

0.8

4.0

5.3

260

SEMiX^®2s

Trench IGBT Modules

SEMiX252GB126HDs

Features

I_F= 150 A

I_RRM

Q_rr

di/dt_off= 4600 A/µs

µC

_GE= -15 V

_CC= 600 V

T_j= 125 °C

E_rr

R_th(j-c)

per diode

0.24

K/W

Module

L_CE

R_CC'+EE'

0.7

m

K/W

T_C= 25 °C

res., terminal-chip

_C= 125 °C

R_th(c-s)

M_s

M_t

per module

to heat sink (M5)

0.045

• Homogeneous Si

2.5

• Trench = Trenchgate technology

• V_CE(sat)with positive temperature

coefficient

• High short circuit capability

• UL recognised file no. E63532

to terminals (M6)

250

Temperatur Sensor

R₁₀₀

Typical Applications*

T_c=100°C (R₂₅=5 k)

493 ± 5%

3550

±2%



• AC inverter drives

• UPS

B_100/125

R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)]; T[K];

• Electronic Welding

Remarks

• Case temperatur limited to T_C=125°C

max.

• Not for new design

Rev. 1 – 23.03.2011

123 4 5

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