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SD1530-08 PDF预览

SD1530-08

更新时间: 2024-11-17 22:50:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频双极晶体管开关微波电子航空局域网
页数 文件大小 规格书
5页 61K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

SD1530-08 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, S-CDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.65
Is Samacsys:N其他特性:WITH EMITTER BALLASTING RESISTORS
外壳连接:BASE最大集电极电流 (IC):2.6 A
集电极-发射极最大电压:65 V配置:SINGLE
最小直流电流增益 (hFE):10最高频带:L BAND
JESD-30 代码:S-CDFM-F2元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):87.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SD1530-08 数据手册

 浏览型号SD1530-08的Datasheet PDF文件第2页浏览型号SD1530-08的Datasheet PDF文件第3页浏览型号SD1530-08的Datasheet PDF文件第4页浏览型号SD1530-08的Datasheet PDF文件第5页 
SD1530-08  
RF & MICROWAVE TRANSISTORS  
AVIONICS APPLICATIONS  
.
DESIGNED FOR HIGH POWER PULSED  
IFF, DME, TACAN APPLICATIONS  
40 WATTS (typ.) IFF 1030 - 1090 MHz  
35 WATTS (min.) DME 1025 - 1150 MHz  
25 WATTS (typ.) TACAN 960 - 1215 MHz  
9.0 dB MIN. GAIN  
.
.
.
.
.
.
REFRACTORY GOLD METALLIZATION  
.250 SQ. 2LFL (M105)  
EMITTER BALLASTING AND LOW  
THERMAL RESISTANCE FOR  
RELIABILITY AND RUGGEDNESS  
hermetically sealed  
ORDER CODE  
BRANDING  
1530-8  
SD1530-08  
.
INFINITE LOAD VSWR CAPABILITY AT  
SPECIFIED OPERATING CONDITIONS  
.
INPUT MATCHED, COMMON BASE  
CONFIGURATION  
PIN CONNECTION  
DESCRIPTION  
The SD1530-08 is a gold metallized silicon, NPN  
power transistor designed for applications requiring  
high peak power and low duty cycles such as  
IFF, DME and TACAN. The SD1530-08 is pack-  
aged in the .250” input matched hermetic stripline  
flange package resulting in improved broadband  
performance and a low thermal resistance.  
1. Collector  
2. Base  
3. Emitter  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
65  
Unit  
Collector-Base Voltage  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Device Current  
65  
3.5  
V
2.6  
A
PDISS  
TJ  
Power Dissipation  
87.5  
+200  
W
°
Junction Temperature  
Storage Temperature  
C
C
°
TSTG  
65 to +150  
THERMAL DATA  
RTH(j-c)  
Junction-Case Thermal Resistance  
2.0  
°C/W  
1/5  
August 1993  

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