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SD1537-2 PDF预览

SD1537-2

更新时间: 2024-09-16 09:31:19
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
1页 162K
描述
NPN SILICON RF POWER TRANSISTOR

SD1537-2 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
风险等级:5.63Is Samacsys:N
最大集电极电流 (IC):5 A配置:SINGLE
最高频带:L BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

SD1537-2 数据手册

  
ASI SD1537-2  
NPN SILICON RF POWER TRANSISTOR  
PACKAGE STYLE .175 2L FLG  
DESCRIPTION:  
The ASI SD1537-2 is a Common  
Base Device Class C, Designed for  
IFF Applications.  
FEATURES INCLUDE:  
Gold Metelization  
InputMatching  
Broad Band Performance  
MAXIMUM RATINGS  
5.0 A  
50 V  
IC  
VCES  
PDISS  
TJ  
300 W @ TC = 25 °C  
-55 °C to +200 °C  
-55 °C to +150 °C  
0.60 °C/W  
TSTG  
θJC  
CHARACTERISTICS TC = 25°C  
SYMBOL  
BVCES  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 15 mA  
IE = 10 mA  
VCE = 5.0 V  
50  
4.0  
10  
V
BVEBO  
hFE  
V
IC = 200 mA  
PIN = 20 W  
---  
POUT  
GP  
VCC = 43 V  
WIDTH = 10 µS  
f = 1090 MHz PULSE  
DUTY CYCLE = 1.0%  
150  
8.7  
35  
W
dB  
%
ηC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. A  
1/1  

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