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SD1538-08 PDF预览

SD1538-08

更新时间: 2024-11-17 22:13:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频双极晶体管开关微波电子航空局域网
页数 文件大小 规格书
5页 74K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

SD1538-08 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, S-CDFM-F2
针数:2Reach Compliance Code:unknown
风险等级:5.84外壳连接:BASE
最大集电极电流 (IC):11 A配置:SINGLE
最小直流电流增益 (hFE):5最高频带:L BAND
JESD-30 代码:S-CDFM-F2元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):583 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SD1538-08 数据手册

 浏览型号SD1538-08的Datasheet PDF文件第2页浏览型号SD1538-08的Datasheet PDF文件第3页浏览型号SD1538-08的Datasheet PDF文件第4页浏览型号SD1538-08的Datasheet PDF文件第5页 
SD1538-08  
RF & MICROWAVE TRANSISTORS  
AVIONICS APPLICATIONS  
.
DESIGNED FOR HIGH POWER PULSE  
IFF, DME, AND TACAN APPLICATIONS  
200 W (typ.) IFF 1030 - 1090 MHz  
150 W (min.) DME 1025 - 1150 MHz  
140 W (typ.) TACAN 960 - 1215 MHz  
7.8 dB MIN. GAIN  
.
.
.
.
.
.
REFRACTORY GOLD METALLIZATION  
.400 x .400 2LFL (M138)  
BALLASTING AND LOW THERMAL  
RESISTANCE FOR RELIABILITY AND  
RUGGEDNESS  
hermetically sealed  
ORDER CODE  
BRANDING  
1538-8  
SD1538-08  
.
30:1 LOAD VSWR CAPABILITY AT  
SPECIFIED OPERATING CONDITIONS  
.
INPUT AND OUTPUT MATCHED,  
COMMON BASE CONFIGURATION  
PIN CONNECTION  
DESCRIPTION  
The SD1538-08 is a gold metallized, silicon NPN  
power transistor. The SD1538-08 is designed for  
applications requiring high peak power and low  
duty cycles such as IFF, DME and TACAN. The  
SD1538-08 is packaged in a metal/ceramic pack-  
age with internal input/output matching, resulting  
in improved broadband performance and low ther-  
mal resistance.  
1. Collector  
2. Base  
3. Emitter  
4. Base  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
VCBO  
VCES  
VEBO  
IC  
Parameter  
Value  
65  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Device Current  
65  
V
3.5  
V
11  
A
PDISS  
TJ  
Power Dissipation  
583  
+200  
W
°
°
Junction Temperature  
Storage Temperature  
C
C
TSTG  
65 to +150  
0.30  
THERMAL DATA  
RTH(j-c)  
Junction-Case Thermal Resistance  
°C/W  
1/5  
September 6, 1994  

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