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SD1534-08 PDF预览

SD1534-08

更新时间: 2024-11-06 09:31:19
品牌 Logo 应用领域
ASI 晶体晶体管开关射频局域网
页数 文件大小 规格书
1页 23K
描述
NPN SILICON RF POWER TRANSISTOR

SD1534-08 技术参数

生命周期:Active包装说明:FLANGE MOUNT, S-CDFM-F2
针数:2Reach Compliance Code:unknown
风险等级:5.13外壳连接:BASE
最大集电极电流 (IC):5.5 A配置:SINGLE
最小直流电流增益 (hFE):10最高频带:L BAND
JESD-30 代码:S-CDFM-F2元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):218 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SD1534-08 数据手册

  
ASI SD1534-08  
NPN SILICON RF POWER TRANSISTOR  
PACKAGE STYLE .250 SQ 2L FL  
DESCRIPTION:  
1
The ASI SD1534-08 is a Common  
Base Device Designed for DME IFF,  
and TACAN Pulse Applications.  
3
FEATURES INCLUDE:  
Gold Metalization  
Input Matching  
2
Emitter Ballasting  
MAXIMUM RATINGS  
5.5 A  
IC  
65 V  
VCES  
PDISS  
TJ  
218 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
0.80 OC/W  
TSTG  
θJC  
1 = COLLECTOR  
2 = EMITTER  
3 = BASE  
CHARACTERISTICS TC = 25 O  
C
SYMBOL  
BVCBO  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 10 mA  
IC = 25 mA  
IE = 10 mA  
VCE = 50 V  
65  
BVCES  
BVEBO  
ICES  
65  
V
V
3.5  
5.0  
mA  
---  
hFE  
VCE = 5.0 V  
IC = 100 mA  
10  
200  
PG  
7.5  
75  
dB  
W
VCC = 50 V  
PULSE WIDTH = 10 µS  
PIN = 13.5 W  
f = 1025 to 1150 MHz  
DUTY CYCLE = 1.0%  
POUT  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

SD1534-08 替代型号

型号 品牌 替代类型 描述 数据表
SD1534-08 STMICROELECTRONICS

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