SD125SB45C

更新时间： 2024-09-17 04:00:15

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SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop

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SD125SB45C 数据手册

SD125SB45A/B/C

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 512, REV. B

SILICON SCHOTTKY RECTIFIER DIE

Very Low Forward Voltage Drop

Applications:

• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

Features:

•

Soft Reverse Recovery at Low and High Temperature

Very Low Forward Voltage Drop

Low Power Loss, High Efficiency

•

High Surge Capacity

Guard Ring for Enhanced Durability and Long Term Reliability

Guaranteed Reverse Avalanche Characteristics

Electrically / Mechanically Stable during and after Packaging

Maximum Ratings:

Characteristics

Symbol

V_RWM

I_F(AV)

Condition

Max.

Units

Peak Inverse Voltage

Max. Average Forward

Current

Max. Peak One Cycle Non-

Repetitive Surge Current

Non-Repetitive Avalanche

Energy

50% duty cycle, rectangular

wave form

I_FSM

E_AS

I_AR

8.3 ms, half Sine wave ⁽¹⁾

280

T_J= 25 °C, I_AS= 3.0 A,

L = 4.4 mH

_ASdecay linearly to 0 in 1 µs

Repetitive Avalanche Current

3.0

ƒ limited by T_Jmax V_A=1.5V_R

Max. Junction Temperature

Max. Storage Temperature

T_J

T_stg

-65 to +175

°C

Electrical Characteristics:

Characteristics

Max. Forward Voltage Drop

Symbol

V_F1

Condition

@ 15A, Pulse, T_J= 25 °C

@ 15A, Pulse, T_J= 125 °C

@V_R= 45V, Pulse,

T_J= 25 °C

@V_R= 45V, Pulse,

T_J= 125 °C

@V_R= 5V, T_C= 25 °C

f_SIG= 1MHz,

Max.

0.64

0.57

400

Units

V_F2

I_R1

Max. Reverse Current

µA

I_R2

C_T

Max. Junction Capacitance

(1) in SHD package

800

V_SIG= 50mV (p-p)

• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •

• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •

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