SD125SC200B

更新时间： 2024-11-07 04:05:19

品牌	Logo	应用领域
SENSITRON		二极管测试瞄准线功效
页数	文件大小	规格书
3页	187K
描述
SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop

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数据手册

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SD125SC200B 数据手册

SENSITRON

SEMICONDUCTOR

SD125SC200A/B/C

TECHNICAL DATA

DATASHEET 4938, Rev A

SILICON SCHOTTKY RECTIFIER DIE

Very Low Forward Voltage Drop

Applications:

• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

Features:

•

Soft Reverse Recovery at Low and High Temperature

Very Low Forward Voltage Drop

Low Reverse Leakage Current

Low Power Loss, High Efficiency

High Surge Capacity

Guard Ring for Enhanced Durability and Long Term Reliability

Guaranteed Reverse Avalanche Characteristics

Electrically / Mechanically Stable during and after Packaging

•

Maximum Ratings:

Characteristics

Symbol

V_RWM

I_F(AV)

Condition

Max.

200

Units

Peak Inverse Voltage

Max. Average Forward Current

50% duty cycle, rectangular

wave form

Max. Peak One Cycle Non-

Repetitive Surge Current

Non-Repetitive Avalanche

Energy

I_FSM

E_AS

I_AR

8.3 ms, half Sine wave ⁽¹⁾

280

7.2

0.6

T_J= 25 °C, I_AS= 0.6 A,

L = 40mH

_ASdecay linearly to 0 in 1 µs

Repetitive Avalanche Current

ƒ limited by T_Jmax V_A=1.5V_R

Max. Junction Temperature

Max. Storage Temperature

T_J

T_stg

-65 to +200

°C

Electrical Characteristics:

Characteristics

Symbol

V_F1

Condition

@ 15A, Pulse, T_J= 25 °C

@ 15A, Pulse, T_J= 125 °C

@V_R= 200V, Pulse,

T_J= 25 °C

@V_R= 200V, Pulse,

T_J= 125 °C

@V_R= 5V, T_C= 25 °C

f_SIG= 1MHz,

Max.

0.92

0.76

350

Units

Max. Forward Voltage Drop

V_F2

I_R1

Max. Reverse Current

µA

I_R2

C_T

Max. Junction Capacitance

(1) in SHD package

300

V_SIG= 50mV (p-p)

• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •

• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •

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