Datasheet > SD103AW

SD103AW

更新时间： 2024-11-28 09:31:27

品牌	Logo	应用领域
金誉半导体 - HTSEMI		肖特基二极管
页数	文件大小	规格书
2页	428K
描述
SCHOTTKY DIODES

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中文翻译

获取价格

数据手册

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SD103AW 数据手册

SD103AW-SD103CW

SCHOTTKY DIODES

SSOODD--112233

FEATURES

Low forward voltage drop

Guard ring construction for transient protection

Negligible reverse recovery time

Low reverse capacitance

MARKING: SD103AW: S4

SD103BW: S5

SD103CW: S6

Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃

Parameter

Peak Repetitive Peak reverse voltage

Working Peak

Symbol

V_RRM

V_RWM

V_R

SD103AW

SD103BW

SD103CW

Unit

DC Blocking

Voltage

RMS Reverse Voltage

V_R(RMS)

I_FM

350

Forward Continuous Current

Repetitive Peak Forward Current @t≤1.0s

Power Dissipation

I_FRM

1.5

500

℃/W

℃

Thermal Resistance Junction to Ambient

Storage temperature

R_θJA

T_STG

250

-65~+150

Electrical Ratings @T_A=25℃

Parameter

Symbol

Min.

Typ.

Max. Unit

Conditions

I_R=100μA

Reverse Breakdown Voltage

SD103AW

SD103BW

SD103CW

V _(BR)R

I_R=100μA

0.37

I_F=20mA

Forward voltage

Reverse current

V_F

0.60

I_F=200mA

SD103AW

SD103BW

SD103CW

V_R=30V

I_RM

5.0

μA

V_R=20V

V_R=10V

Capacitance between terminals

C_T

t_rr

V_R=0V,f=1.0MHz

I_F=I_R=200mA

Irr=0.1XI_R,R_L=100Ω

Reverse Recovery Time

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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