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SD103AW-G, SD103BW-G, SD103CW-G PDF预览

SD103AW-G, SD103BW-G, SD103CW-G

更新时间: 2024-11-29 14:54:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 95K
描述
Small Signal Schottky Diodes

SD103AW-G, SD103BW-G, SD103CW-G 数据手册

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SD103AW-G, SD103BW-G, SD103CW-G  
www.vishay.com  
Vishay Semiconductors  
Small Signal Schottky Diodes  
FEATURES  
• The low forward voltage drop and fast switching  
make it ideal for protection of MOS devices,  
steering, biasing, and coupling diodes for fast  
switching and low logic level applications  
• Other applications are click suppression,  
efficient full wave bridges in telephone subsets,  
and blocking diodes in rechargeable low voltage  
battery systems  
click logo to get started  
DESIGN SUPPORT TOOLS  
• The SD103 series is a metal-on-silicon Schottky  
barrier device which is protected by a PN  
junction guardring  
Models  
Available  
• For general purpose applications  
MECHANICAL DATA  
Case: SOD-123  
• AEC-Q101 qualified available  
(part number on request)  
• Base P/N-G3 - green, commercial grade  
Weight: approx. 9.4 mg  
Cathode band color: black  
Packaging codes/options:  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
CIRCUIT  
CONFIGURATION  
PART  
ORDERING CODE  
TYPE MARKING  
REMARKS  
SD103AW-G  
SD103BW-G  
SD103CW-G  
SD103AW-G3-08 or SD103AW-G3-18  
SD103BW-G3-08 or SD103BW-G3-18  
SD103CW-G3-08 or SD103CW-G3-18  
Single  
Z6  
Z7  
Z8  
Single  
Tape and reel  
Single  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
VRRM  
VRRM  
VRRM  
IF  
VALUE  
40  
UNIT  
V
SD103AW-G  
SD103BW-G  
SD103CW-G  
Repetitive peak reverse voltage  
30  
V
20  
V
Forward continuous current (1)  
Power dissipation (infinite heat sink) (1)  
Single cycle surge  
350  
400  
2
mA  
mW  
A
Ptot  
10 μs square wave  
IFSM  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
300  
UNIT  
K/W  
°C  
Junction temperature  
125  
Operating temperature range  
Storage temperature range  
Top  
-55 to +125  
-55 to +150  
°C  
Tstg  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
Rev. 1.8, 22-Feb-18  
Document Number: 85160  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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