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SD103AW-E3-18 PDF预览

SD103AW-E3-18

更新时间: 2024-11-28 14:44:39
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 83K
描述
Rectifier Diode, Schottky, 1 Element, 0.35A, 40V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2

SD103AW-E3-18 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:10 weeks风险等级:0.62
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.37 V
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:2 A
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:0.35 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.4 W
最大重复峰值反向电压:40 V最大反向恢复时间:0.01 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

SD103AW-E3-18 数据手册

 浏览型号SD103AW-E3-18的Datasheet PDF文件第2页浏览型号SD103AW-E3-18的Datasheet PDF文件第3页浏览型号SD103AW-E3-18的Datasheet PDF文件第4页 
SD103AW, SD103BW, SD103CW  
www.vishay.com  
Vishay Semiconductors  
Small Signal Schottky Diodes  
FEATURES  
• The low forward voltage drop and fast switching  
make it ideal for protection of MOS devices,  
steering, biasing, and coupling diodes for fast  
switching and low logic level applications  
• Other applications are click suppression,  
efficient full wave bridges in telephone subsets,  
and blocking diodes in rechargeable low voltage  
battery systems  
MECHANICAL DATA  
• The SD103 series is a metal-on-silicon Schottky barrier  
device which is protected by a PN junction guardring  
Case: SOD-123  
Weight: approx. 10.3 mg  
• For general purpose applications  
Cathode band color: black  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
• AEC-Q101 qualified  
• Base P/N-E3 - RoHS-compliant, commercial grade  
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PARTS TABLE  
INTERNAL  
CONSTRUCTION  
PART  
ORDERING CODE  
TYPE MARKING  
REMARKS  
SD103AW-E3-08 or SD103AW-E3-18  
SD103AW-HE3-08 or SD103AW-HE3-18  
SD103BW-E3-08 or SD103BW-E3-18  
SD103BW-HE3-08 or SD103BW-HE3-18  
SD103CW-E3-08 or SD103CW-E3-18  
SD103CW-HE3-08 or SD103CW-HE3-18  
SD103AW  
Single diode  
S6  
SD103BW  
SD103CW  
Single diode  
Single diode  
S7  
S8  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
VRRM  
VRRM  
VRRM  
IF  
VALUE  
40  
UNIT  
V
SD103AW  
SD103BW  
SD103CW  
Repetitive peak reverse voltage  
30  
V
20  
V
Forward continuous current (1)  
Power dissipation (infinite heat sink) (1)  
Single cycle surge  
350  
400  
2
mA  
mW  
A
Ptot  
10 μs square wave  
IFSM  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
300  
UNIT  
K/W  
°C  
Junction temperature  
125  
Operating temperature range  
Storage temperature range  
Top  
- 55 to + 125  
- 55 to + 150  
°C  
Tstg  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
Rev. 1.6, 11-Mar-13  
Document Number: 85681  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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