SD103AW, SD103BW, SD103CW
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Vishay Semiconductors
Small Signal Schottky Diodes
FEATURES
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing, and coupling diodes for fast
switching and low logic level applications
• Other applications are click suppression,
efficient full wave bridges in telephone subsets,
and blocking diodes in rechargeable low voltage
battery systems
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DESIGN SUPPORT TOOLS
• The SD103 series is a metal-on-silicon Schottky barrier
device which is protected by a PN junction guardring
Models
• For general purpose applications
Available
• AEC-Q101 qualified available
MECHANICAL DATA
Case: SOD-123
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Weight: approx. 10.3 mg
Cathode band color: black
Packaging codes/options:
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
TYPE
MARKING
PART
ORDERING CODE
CIRCUIT CONFIGURATION
REMARKS
SD103AW-E3-08 or SD103AW-E3-18
SD103AW-HE3-08 or SD103AW-HE3-18
SD103BW-E3-08 or SD103BW-E3-18
SD103BW-HE3-08 or SD103BW-HE3-18
SD103CW-E3-08 or SD103CW-E3-18
SD103CW-HE3-08 or SD103CW-HE3-18
SD103AW
Single
S6
SD103BW
SD103CW
Single
Single
S7
S8
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VRRM
VRRM
VRRM
IF
VALUE
40
UNIT
V
SD103AW
SD103BW
SD103CW
Repetitive peak reverse voltage
30
V
20
V
Forward continuous current (1)
Power dissipation (infinite heat sink) (1)
Single cycle surge
350
400
2
mA
mW
A
Ptot
10 μs square wave
IFSM
Note
(1)
Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air (1)
TEST CONDITION
SYMBOL
RthJA
Tj
VALUE
300
UNIT
K/W
°C
Junction temperature
125
Operating temperature range
Storage temperature range
Top
-55 to +125
-55 to +150
°C
Tstg
°C
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Rev. 1.7, 23-Feb-18
Document Number: 85681
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000