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SD103AW, SD103BW, SD103CW PDF预览

SD103AW, SD103BW, SD103CW

更新时间: 2024-11-30 14:54:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 92K
描述
Small Signal Schottky Diodes

SD103AW, SD103BW, SD103CW 数据手册

 浏览型号SD103AW, SD103BW, SD103CW的Datasheet PDF文件第2页浏览型号SD103AW, SD103BW, SD103CW的Datasheet PDF文件第3页浏览型号SD103AW, SD103BW, SD103CW的Datasheet PDF文件第4页 
SD103AW, SD103BW, SD103CW  
www.vishay.com  
Vishay Semiconductors  
Small Signal Schottky Diodes  
FEATURES  
• The low forward voltage drop and fast switching  
make it ideal for protection of MOS devices,  
steering, biasing, and coupling diodes for fast  
switching and low logic level applications  
• Other applications are click suppression,  
efficient full wave bridges in telephone subsets,  
and blocking diodes in rechargeable low voltage  
battery systems  
click logo to get started  
DESIGN SUPPORT TOOLS  
• The SD103 series is a metal-on-silicon Schottky barrier  
device which is protected by a PN junction guardring  
Models  
• For general purpose applications  
Available  
• AEC-Q101 qualified available  
MECHANICAL DATA  
Case: SOD-123  
• Base P/N-E3 - RoHS-compliant, commercial grade  
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified  
Weight: approx. 10.3 mg  
Cathode band color: black  
Packaging codes/options:  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
TYPE  
MARKING  
PART  
ORDERING CODE  
CIRCUIT CONFIGURATION  
REMARKS  
SD103AW-E3-08 or SD103AW-E3-18  
SD103AW-HE3-08 or SD103AW-HE3-18  
SD103BW-E3-08 or SD103BW-E3-18  
SD103BW-HE3-08 or SD103BW-HE3-18  
SD103CW-E3-08 or SD103CW-E3-18  
SD103CW-HE3-08 or SD103CW-HE3-18  
SD103AW  
Single  
S6  
SD103BW  
SD103CW  
Single  
Single  
S7  
S8  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
VRRM  
VRRM  
VRRM  
IF  
VALUE  
40  
UNIT  
V
SD103AW  
SD103BW  
SD103CW  
Repetitive peak reverse voltage  
30  
V
20  
V
Forward continuous current (1)  
Power dissipation (infinite heat sink) (1)  
Single cycle surge  
350  
400  
2
mA  
mW  
A
Ptot  
10 μs square wave  
IFSM  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
300  
UNIT  
K/W  
°C  
Junction temperature  
125  
Operating temperature range  
Storage temperature range  
Top  
-55 to +125  
-55 to +150  
°C  
Tstg  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
Rev. 1.7, 23-Feb-18  
Document Number: 85681  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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