Datasheet > SD103AW_14

SD103AW_14

更新时间： 2024-11-29 01:21:19

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	200K
描述
Low VF SMD Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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SD103AW_14 数据手册

SD103AW thru SD103CW

Taiwan Semiconductor

Small Signal Product

Low VF SMD Schottky Barrier Diode

FEATURES

- Low power loss, high current capability, low VF

- Surface device type mounting

- Moisture sensitivity level 1

- Matte Tin(Sn) lead finish with Nickel(Ni) underplate

- Packing code with suffix "G" means

green compound (halogen-free)

SOD-123

MECHANICAL DATA

- Case: SOD-123 small outline plastic package

- Molding compound, UL flammability classification rating 94V-0

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guar

- High temperature soldering guaranteed : 260°C/10s

- Polarity: Indicated by cathode band

- Weight: 0.01 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

SD103AW SD103BW SD103CW

SYMBOL

P_D

UNIT

Power Dissipation

400

Repetitive Peak Reverse Voltage

Reverse Voltage

V_RRM

V_R

Mean Forward Current @ T_L= 100°C

Repetitive Peak Forward Surge Current

Thermal Resistance ( Junction to Ambient )

Junction Temperature

I_O

350

I_FRM

R_θJA

T_J

1.5

@ t ≦ 1.0 s

^oC/W

^oC

300

125

^oC

Storage Temperature Range

T_STG

-65 to +125

PARAMETER

MIN

TYP

MAX

SYMBOL

Units

SD103AW I_R= 10 μA

SD103BW I_R= 10 μA

SD103CW I_R= 10 μA

I_F= 20 mA

V_(BR)

Reverse Breakdown Voltage

0.37

0.60

V_F

Forward Voltage

I_F= 200 mA

SD103AW V_R= 30 V

SD103BW V_R= 20 V

SD103CW V_R= 10 V

V_R= 0 , f = 1.0 MHz

I_R

Reverse Leakage Current

Junction Capacitance

μA

C_J

Document Number: DS_S1411004

Version: C14

12 3 4 5

中文翻译

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