Datasheet > SCT20N120

SCT20N120

更新时间： 2024-11-02 14:57:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	501K
描述
碳化硅功率MOSFET，1200 V、20 A、189 mOhm（典型值，Tj = 150 C），HiP247封装

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SCT20N120 数据手册

SCT20N120

Datasheet

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ

(typ., T_J= 150 °C) in an HiP247 package

Features

•

Very tight variation of on-resistance vs. temperature

Very high operating junction temperature capability (T_J= 200 °C)

Very fast and robust intrinsic body diode

Low capacitance

Applications

HiP247

•

Solar inverters, UPS

Motor drives

D(2, TAB)

High voltage DC-DC converters

Switch mode power supplies

G(1)

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative

properties of wide bandgap materials. This results in unsurpassed on-resistance per

unit area and very good switching performance almost independent of temperature.

The outstanding thermal properties of the SiC material, combined with the device’s

housing in the proprietary HiP247 package, allows designers to use an industry

standard outline with significantly improved thermal capability. These features render

the device perfectly suitable for high-efficiency and high power density applications.

S(3)

AM01475v1_noZen

Product status link

SCT20N120

Product summary

Order code

Marking

SCT20N120

HiP247

Package

Packing

Tube

DS10360 - Rev 5 - September 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...13

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