Datasheet > SCT2160KE

SCT2160KE

更新时间： 2023-09-03 20:34:05

品牌	Logo	应用领域
罗姆 - ROHM		开关
页数	文件大小	规格书
14页	1061K
描述
基于SiC的平面型MOSFET。（SiC-SBD非一体型）其特征是高耐压、低导通电阻、高速开关。

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中文翻译

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SCT2160KE 数据手册

SCT2160KE

Datasheet

N-channel SiC power MOSFET

lOutline

TO-247N

V_DSS

1200V

160mΩ

22A

R_DS(on)(Typ.)

I_D

(3)

(2)

P_D

165W

(1)

lInner circuit

lFeatures

(1) Gate

(2) Drain

(3) Source

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

*1 Body Diode

5) Simple to drive

lPackaging specifications

TO-247N

6) Pb-free lead plating ; RoHS compliant

Package

Packing

Tube

Reel size (mm)

lApplication

Tape width (mm)

Type

• Solar inverters

• DC/DC converters

• Induction heating

• Motor drives

Basic ordering unit (pcs)

Packing code

Marking

C11

SCT2160KE

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol

V_DSS

Value

1200

Unit

Drain - Source voltage

T_c= 25°C

Continuous drain current

T_c= 100°C

I_D

Pulsed drain current

I_D,pulse

V_GSS

Gate - Source voltage (DC)

Gate - Source surge voltage (T_surge˂ 300nsec)

Power dissipation (T_c= 25°C)

Junction temperature

-6 to 22

-10 to 26

165

V_GSS-surge

P_D

T_j

°C

175

T_stg

Range of storage temperature

-55 to +175

www.rohm.com

TSZ22111・14・001

TSQ50211-SCT2160KE

29.Mar.2021 - Rev.001

1/12

12 3 4 5 6 7...14

中文翻译

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