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SCT20N170AG PDF预览

SCT20N170AG

更新时间: 2024-11-02 14:57:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
11页 354K
描述
Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm typ., 43 A in an HiP247 package

SCT20N170AG 数据手册

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SCT20N170AG  
Datasheet  
Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mΩ typ., 43 A  
in an HiP247 package  
Features  
V
R
typ.  
I
D
Order code  
DS  
DS(on)  
SCT20N170AG  
1700 V  
64 mΩ  
43 A  
AEC-Q101 rev. C qualified  
Very fast and robust intrinsic body diode  
Low capacitances  
3
2
1
Very high operating junction temperature capability (TJ = 200 °C)  
HiP247  
Applications  
D(2, TAB)  
Main inverter (electric traction)  
DC/DC converter for EV/HEV  
On board charger (OBC)  
G(1)  
Description  
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative  
properties of wide bandgap materials. This results in unsurpassed on-resistance per  
unit area and very good switching performance almost independent of temperature.  
The outstanding thermal properties of the SiC material, combined with the device’s  
housing in the proprietary HiP247 package, allows designers to use an industry  
standard outline with significantly improved thermal capability. These features render  
the device perfectly suitable for high-efficiency and high power density applications.  
S(3)  
AM01475v1_noZen  
Product status link  
SCT20N170AG  
Product summary  
Order code  
SCT20N170AG  
Marking  
Package  
Packing  
SCT20N170AG  
HiP247  
Tube  
DS13353 - Rev 5 - June 2023  
For further information contact your local STMicroelectronics sales office.  
www.st.com  
 

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