Datasheet > SCT2120AF_17

SCT2120AF_17

更新时间： 2024-11-02 01:22:47

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
14页	836K
描述
N-channel SiC power MOSFET

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中文翻译

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SCT2120AF_17 数据手册

SCT2120AF

Datasheet

N-channel SiC power MOSFET

Outline

TO220AB

V_DSS

650V

120m

29A

R_DS(on)(Typ.)

I_D

P_D

165W

(1) (2) (3)

Features

Inner circuit

(2)

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

(1) Gate

(2) Drain

(3) Source

(1)

*1 Body Diode

5) Simple to drive

(3)

6) Pb-free lead plating ; RoHS compliant

Packaging specifications

Packing

Tube

Reel size (mm)

Application

Tape width (mm)

Type

・Solar inverters

Basic ordering unit (pcs)

・DC/DC converters

・Switch mode power supplies

・Induction heating

・Motor drives

Packing code

Marking

SCT2120AF

Absolute maximum ratings (T_a= 25C)

Parameter

Symbol

V_DSS

Value

650

Unit

Drain - Source voltage

T_c= 25C

T_c= 100C

I_D

Continuous drain current

I_D

Pulsed drain current

I_D,pulse

V_GSS

Gate - Source voltage (DC)

6 to 22

10 to 26

165

Gate - Source surge voltage (T_surge˂ 300nsec)

Power dissipation (T_c= 25C)

Junction temperature

V_GSS-surge

P_D

T_j

C

175

T_stg

Range of storage temperature

55 to 175

www.rohm.com

2017.07 - Rev.E

1/12

12 3 4 5 6 7...14

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