Datasheet > SCT20N120AG

SCT20N120AG

更新时间： 2024-11-02 14:57:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	290K
描述
汽车级碳化硅功率MOSFET，1200 V、20 A、189 mOhm（典型值，Tj = 150 C），HiP247封装

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SCT20N120AG 数据手册

SCT20N120AG

Datasheet

Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ

(typ., T_J=150 °C), in an HiP247 package

Features

•

AEC-Q101 qualified

Very tight variation of on-resistance vs. temperature

Very high operating temperature capability (T_J= 200 °C)

Very fast and robust intrinsic body diode

Low capacitance

HiP247

Applications

•

Motor drives

D(2, TAB)

EV chargers

High voltage DC-DC converters

Switch mode power supplies

G(1)

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative

properties of wide bandgap materials. This results in unsurpassed on-resistance per

unit area and very good switching performance almost independent of temperature.

The outstanding thermal properties of the SiC material, combined with the device’s

housing in the proprietary HiP247 package, allows designers to use an industry-

standard outline with significantly improved thermal capability. These features render

the device perfectly suitable for high-efficiency and high power density applications.

S(3)

AM01475v1_noZen

Product status link

SCT20N120AG

Product summary

Order code

SCT20N120AG

Marking

Package

Packing

HiP247

Tube

DS12516 - Rev 4 - September 2022

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...13

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