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SCM63F733ATQ11R PDF预览

SCM63F733ATQ11R

更新时间: 2024-11-10 20:48:07
品牌 Logo 应用领域
恩智浦 - NXP 静态存储器内存集成电路
页数 文件大小 规格书
17页 345K
描述
IC,SYNC SRAM,128KX32,CMOS,QFP,100PIN,PLASTIC

SCM63F733ATQ11R 技术参数

生命周期:Transferred零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:unknown风险等级:5.66
最长访问时间:11 ns其他特性:FLOW-THROUGH ARCHITECTURE
JESD-30 代码:R-PQFP-G100长度:20 mm
内存密度:4194304 bit内存集成电路类型:CACHE SRAM
内存宽度:32功能数量:1
端子数量:100字数:131072 words
字数代码:128000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX32封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.6 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD宽度:14 mm
Base Number Matches:1

SCM63F733ATQ11R 数据手册

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Freescale Semiconductor, Inc.  
SEMICONDUCTOR TECHNICAL DATA  
Order this document  
by MCM63F733A/D  
MCM63F733A  
SCM63F733A  
128K x 32 Bit Flow–Through  
BurstRAM Synchronous  
Fast Static RAM  
The MCM63F733A and SCM63F733A are 4M–bit synchronous fast static  
RAMs designed to provide a burstable, high performance, secondary cache for  
the PowerPC and other high performance microprocessors. They are orga-  
nized as 128K words of 32 bits each, fabricated with high performance silicon  
gate CMOS technology. This device integrates input registers, a 2–bit address  
counter, andhighspeedSRAMontoasinglemonolithic circuitforreducedparts  
count in cache data RAM applications. Synchronous design allows precise  
cycle control with the use of an external clock (K). CMOS circuitry reduces the  
overall power consumption of the integrated functions for greater reliability.  
Addresses (SA), data inputs (DQx), and all control signals except output  
enable (G) and Linear Burst Order (LBO) are clock (K) controlled through  
positive–edge–triggered noninverting registers.  
TQ PACKAGE  
TQFP  
CASE 983A–01  
Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst  
addresses can be generated internally by the MCM63F733A and SCM63F733A  
(burst sequence operates in linear or interleaved mode dependent upon state of  
LBO) and controlled by the burst address advance (ADV) input pin.  
Write cycles are internally self–timed and are initiated by the rising edge of the  
clock (K) input. This feature eliminates complex off–chip write pulse generation  
and provides increased timing flexibility for incoming signals.  
Synchronous byte write (SBx), synchronous global write (SGW), and synchro-  
nous write enable (SW) are provided to allow writes to either individual bytes or  
to all bytes. The four bytes are designated as “a”, “b”, “c”, and “d”. SBa controls  
DQa, SBb controls DQb, etc. Individual bytes are written if the selected byte  
writes SBx are asserted with SW. All bytes are written if either SGW is asserted  
or if all SBx and SW are asserted.  
For read cycles, a flow–through SRAM allows output data to simply flow freely  
from the memory array.  
The MCM63F733A and SCM63F733A operate from a 3.3 V core power supply  
and all outputs operate on a 2.5 V or 3.3 V power supply. All inputs and outputs  
are JEDEC Standard JESD8–5 compatible.  
MCM63F733A–8.5 = 8.5 ns Access  
MCM63F733A–9 = 9 ns Access  
MCM63F733A/SCM63F733A–10 = 10 ns Access  
MCM63F733A/SCM63F733A–11 = 11 ns Access  
3.3 V + 10%/– 5% Core, Power Supply, 2.5 V or 3.3 V I/O Supply  
ADSP, ADSC, and ADV Burst Control Pins  
Selectable Burst Sequencing Order (Linear/Interleaved)  
Internally Self–Timed Write Cycle  
Byte Write and Global Write Control  
Single–Cycle Deselect  
Sleep Mode (ZZ)  
– 40 to 85°C Extended Operating Temperatures (SCM63F733A only)  
100–Pin TQFP Package  
The PowerPC name is a trademark of IBM Corp., used under license therefrom.  
REV 4  
10/26/99  
Motorola, Inc. 1999  
For More Information On This Product,  
Go to: www.freescale.com  

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