Datasheet > SCM63P733ATQ133R

SCM63P733ATQ133R

更新时间： 2024-11-10 19:47:55

品牌	Logo	应用领域
恩智浦 - NXP		静态存储器内存集成电路
页数	文件大小	规格书
17页	380K
描述
IC,SYNC SRAM,128KX32,CMOS,QFP,100PIN,PLASTIC

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SCM63P733ATQ133R 技术参数

生命周期：	Transferred	零件包装代码：	QFP
包装说明：	LQFP,	针数：	100
Reach Compliance Code：	unknown	风险等级：	5.68
最长访问时间：	4 ns	其他特性：	PIPELINED ARCHITECTURE
JESD-30 代码：	R-PQFP-G100	长度：	20 mm
内存密度：	4194304 bit	内存集成电路类型：	CACHE SRAM
内存宽度：	32	功能数量：	1
端子数量：	100	字数：	131072 words
字数代码：	128000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	128KX32	封装主体材料：	PLASTIC/EPOXY
封装代码：	LQFP	封装形状：	RECTANGULAR
封装形式：	FLATPACK, LOW PROFILE	并行/串行：	PARALLEL
认证状态：	Not Qualified	座面最大高度：	1.6 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	3.135 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	宽度：	14 mm
Base Number Matches：	1

SCM63P733ATQ133R 数据手册

Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA

MOTOROLA

Order this document

by MCM63P733A/D

MCM63P733A

SCM63P733A

128K x 32 Bit Pipelined

BurstRAM Synchronous

Fast Static RAM

The MCM63P733A and SCM63P733A are 4M–bit synchronous fast static

RAMs designed to provide a burstable, high performance, secondary cache.

The MCM63P733A and SCM63P733A (organized as 128K words by 32 bits)

are fabricated in Motorola’s high performance silicon gate CMOS technology.

These devices integrate input registers, an output register, a 2–bit address

counter, and high speed SRAM onto a single monolithic circuit for reduced

parts count in cache data RAM applications. Synchronous design allows

precise cycle control with the use of an external clock (K). CMOS circuitry re-

duces the overall power consumption of the integrated functions for greater

reliability.

TQ PACKAGE

TQFP

CASE 983A–01

Addresses (SA), data inputs (DQx), and all control signals except output

enable (G) and Linear Burst Order (LBO) are clock (K) controlled through

positive–edge–triggered noninverting registers.

Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst

addresses can be generated internally by the MCM63P733A and SCM63P733A

(burstsequenceoperatesinlinearorinterleavedmodedependentuponthestate

of LBO) and controlled by the burst address advance (ADV) input pin.

Write cycles are internally self–timed and are initiated by the rising edge of the

clock (K) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

Synchronous byte write (SBx), synchronous global write (SGW), and synchro-

nous write enable (SW) are provided to allow writes to either individual bytes or

to all bytes. The four bytes are designated as “a”, “b”, “c”, and “d”. SBa controls

DQa, SBb controls DQb, etc. Individual bytes are written if the selected byte

writes SBx are asserted with SW. All bytes are written if either SGW is asserted

or if all SBx and SW are asserted.

For read cycles, pipelined SRAMs output data is temporarily stored by an

edge–triggeredoutput register and then released to the output buffers at the next

rising edge of clock (K).

TheMCM63P733AandSCM63P733Aoperatefroma3.3Vcorepowersupply

and all outputs operate on a 2.5 V or 3.3 V power supply. All inputs and outputs

are JEDEC standard JESD8–5 compatible.

•

MCM63P733A–150 = 3.8 ns Access/6.7 ns Cycle (150 MHz)

MCM63P733A/SCM63P733A–133 = 4 ns Access/7.5 ns Cycle (133 MHz)

MCM63P733A–117 = 4.2 ns Access/8.5 ns Cycle (117 MHz)

MCM63P733A–100 = 4.5 ns Access/10 ns Cycle (100 MHz)

MCM63P733A–90 = 5 ns Access/11 ns Cycle (90 MHz)

3.3 V +10%,–5% Core, Power Supply, 2.5 V or 3.3 V I/O Supply

ADSP, ADSC, and ADV Burst Control Pins

Selectable Burst Sequencing Order (Linear/Interleaved)

Internally Self–Timed Write Cycle

Byte Write and Global Write Control

Single–Cycle Deselect

Sleep Mode (ZZ)

–40° to 85°C Extended Operating Temperatures (SCM63P733A only)

100–Pin TQFP Package

•

REV 5

9/21/99

Motorola, Inc. 1999

MOTOROLA FAST SRAM

MCM63P733A•SCM63P733A

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7...17

中文翻译

下载PDF

与SCM63P733ATQ133R相关器件

型号	品牌	获取价格	描述	数据表
SCM6926WJ10C	MOTOROLA	获取价格	128KX8 STANDARD SRAM, 10ns, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
SCM6926WJ10RC	MOTOROLA	获取价格	128KX8 STANDARD SRAM, 10ns, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
SCM6926WJ12C	MOTOROLA	获取价格	128KX8 STANDARD SRAM, 12ns, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
SCM6926WJ15C	MOTOROLA	获取价格	Standard SRAM, 128KX8, 15ns, BICMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
SCM6926WJ15RC	MOTOROLA	获取价格	Standard SRAM, 128KX8, 15ns, BICMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
SCM6926WJ8RC	MOTOROLA	获取价格	Standard SRAM, 128KX8, 8ns, BICMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
SCM6929WJ10C	MOTOROLA	获取价格	256KX4 STANDARD SRAM, 10ns, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
SCM6929WJ15RC	MOTOROLA	获取价格	256KX4 STANDARD SRAM, 15ns, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
SCM6929WJ8C	MOTOROLA	获取价格	256KX4 STANDARD SRAM, 8ns, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
SCM6929WJ8RC	MOTOROLA	获取价格	256KX4 STANDARD SRAM, 8ns, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

与SCM63P733ATQ133R相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

24
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

24
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

50
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

40

产品中心

服务支持

精选活动

关于我们

帮助中心

SCM63P733ATQ133R

SCM63P733ATQ133R 技术参数

SCM63P733ATQ133R 数据手册

与SCM63P733ATQ133R相关器件

与SCM63P733ATQ133R相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SCM63P733ATQ133R

SCM63P733ATQ133R 技术参数

SCM63P733ATQ133R 数据手册

与SCM63P733ATQ133R相关器件

与SCM63P733ATQ133R相关文章

您还可以找

您在本页遇到什么问题？