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SCM63P733ATQ133R PDF预览

SCM63P733ATQ133R

更新时间: 2024-09-21 21:15:51
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 静态存储器内存集成电路
页数 文件大小 规格书
17页 147K
描述
Cache SRAM, 128KX32, 4ns, CMOS, PQFP100, TQFP-100

SCM63P733ATQ133R 技术参数

生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.68
最长访问时间:4 nsJESD-30 代码:R-PQFP-G100
长度:20 mm内存密度:4194304 bit
内存集成电路类型:CACHE SRAM内存宽度:32
功能数量:1端子数量:100
字数:131072 words字数代码:128000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX32
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.63 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
宽度:14 mmBase Number Matches:1

SCM63P733ATQ133R 数据手册

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MOTOROLA  
SEMICONDUCTOR TECHNICAL DATA  
Order this document  
by MCM63P733A/D  
MCM63P733A  
SCM63P733A  
128K x 32 Bit Pipelined  
BurstRAM Synchronous  
Fast Static RAM  
The MCM63P733A and SCM63P733A are 4M–bit synchronous fast static  
RAMs designed to provide a burstable, high performance, secondary cache.  
The MCM63P733A and SCM63P733A (organized as 128K words by 32 bits)  
are fabricated in Motorola’s high performance silicon gate CMOS technology.  
These devices integrate input registers, an output register, a 2–bit address  
counter, and high speed SRAM onto a single monolithic circuit for reduced  
parts count in cache data RAM applications. Synchronous design allows  
precise cycle control with the use of an external clock (K). CMOS circuitry re-  
duces the overall power consumption of the integrated functions for greater  
reliability.  
TQ PACKAGE  
TQFP  
CASE 983A–01  
Addresses (SA), data inputs (DQx), and all control signals except output  
enable (G) and Linear Burst Order (LBO) are clock (K) controlled through  
positive–edge–triggered noninverting registers.  
Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst  
addresses can be generated internally by the MCM63P733A and SCM63P733A  
(burstsequenceoperatesinlinearorinterleavedmodedependentuponthestate  
of LBO) and controlled by the burst address advance (ADV) input pin.  
Write cycles are internally self–timed and are initiated by the rising edge of the  
clock (K) input. This feature eliminates complex off–chip write pulse generation  
and provides increased timing flexibility for incoming signals.  
Synchronous byte write (SBx), synchronous global write (SGW), and synchro-  
nous write enable (SW) are provided to allow writes to either individual bytes or  
to all bytes. The four bytes are designated as “a”, “b”, “c”, and “d”. SBa controls  
DQa, SBb controls DQb, etc. Individual bytes are written if the selected byte  
writes SBx are asserted with SW. All bytes are written if either SGW is asserted  
or if all SBx and SW are asserted.  
For read cycles, pipelined SRAMs output data is temporarily stored by an  
edge–triggeredoutput register and then released to the output buffers at the next  
rising edge of clock (K).  
TheMCM63P733AandSCM63P733Aoperatefroma3.3Vcorepowersupply  
and all outputs operate on a 2.5 V or 3.3 V power supply. All inputs and outputs  
are JEDEC standard JESD8–5 compatible.  
MCM63P733A–150 = 3.8 ns Access/6.7 ns Cycle (150 MHz)  
MCM63P733A/SCM63P733A–133 = 4 ns Access/7.5 ns Cycle (133 MHz)  
MCM63P733A–117 = 4.2 ns Access/8.5 ns Cycle (117 MHz)  
MCM63P733A–100 = 4.5 ns Access/10 ns Cycle (100 MHz)  
MCM63P733A–90 = 5 ns Access/11 ns Cycle (90 MHz)  
3.3 V +10%,5% Core, Power Supply, 2.5 V or 3.3 V I/O Supply  
ADSP, ADSC, and ADV Burst Control Pins  
Selectable Burst Sequencing Order (Linear/Interleaved)  
Internally Self–Timed Write Cycle  
Byte Write and Global Write Control  
Single–Cycle Deselect  
Sleep Mode (ZZ)  
–40° to 85°C Extended Operating Temperatures (SCM63P733A only)  
100–Pin TQFP Package  
REV 5  
9/21/99  
Motorola, Inc. 1999  

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