CURRENT 7.5Amperes
VOLTAGE 35 to 60 Volts
SBR735 THRU SBR760
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
TO-220A
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· Single rectifier construction
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds, 0.25"(6.35mm) from case
.180
HOLE THRU (4.6)
f
3.8 +.2
.412
.050
(1.27)
(10.5)
MAX.
.108
(2.75)
.248
(6.3)
.595
(15.1)
.040
(1.0)
MAX.
MAX.
.550
.051
(1.3)
.040
(1.0)
MAX.
MAX.
(14.0)
.158
(4.0)
MAX.
MIN.
.200
(5.08)
.120
(3.05)
Mechanical Data
+
PIN 1
PIN 2
PIN 1
PIN 2
+
+
CASE
CASE
· Case : JEDEC TO-220A molded plastic body
· Terminals : Lead solderable per
MIL-STD -750, Method 2026
· Polarity : As marked
· Mounting Position : Any
· Weight : 0.08 ounce, 2.24 gram
Case Negative
Case Positive
Suffix "R"
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
SBR745
45
Symbols
SBR735
35
SBR750
50
SBR760
60
Units
Volts
Volts
Volts
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
RRM
RMS
V
25
32
35
42
Maximum DC blocking voltage
VDC
35
45
50
60
Maximum average forward rectified current
(see Fig. 1)
I(AV
)
7.5
Amps
Amps
Repetitive peak forward current(square wavr,
20KHZ) at TC=105℃
IFRM
15.0
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
I
FSM
150.0
Amps
Volts
mA
Maximum instantaneous forward voltage
at 7.5A (Note 1)
V
F
0.65
15
0.75
50
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
T
T
A
=25℃
1.0
2.5
IR
A=125℃
℃/W
℃
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
RθJC
T
J
-65 to +125
-65 to +150
℃
T
STG
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case