生命周期: | Active | 包装说明: | H2, TO-8B |
Reach Compliance Code: | compliant | 风险等级: | 5.72 |
其他特性: | SMA-F, I/P POWER-MAX (PEAK)=27DBM | 构造: | COAXIAL |
增益: | 13 dB | 最大输入功率 (CW): | 18 dBm |
最大工作频率: | 400 MHz | 最小工作频率: | |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
射频/微波设备类型: | WIDE BAND LOW POWER | 最大电压驻波比: | 3 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SBR820 | DAESAN |
获取价格 |
CURRENT 8.0 AMPERES | |
SBR8210 | MICROSEMI |
获取价格 |
Schottky ORing Diode | |
SBR8210_07 | MICROSEMI |
获取价格 |
80 Amp Schottky Rectifier | |
SBR8210E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 80A, 10V V(RRM), Silicon, DO-203AB, DO-5, 1 | |
SBR8210R | MICROSEMI |
获取价格 |
80 Amp Schottky Rectifier | |
SBR8210RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 80A, 10V V(RRM), Silicon, DO-203AB, DO-5, 1 | |
SBR8215 | MICROSEMI |
获取价格 |
Schottky ORing Diode | |
SBR8215E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 80A, 15V V(RRM), Silicon, DO-203AB, DO-5, 1 | |
SBR8215R | MICROSEMI |
获取价格 |
80 Amp Schottky Rectifier | |
SBR8215RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 80A, 15V V(RRM), Silicon, DO-203AB, DO-5, 1 |