生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.72 | 其他特性: | SMA-F, I/P POWER-MAX (PEAK)=23DBM |
构造: | COAXIAL | 增益: | 14 dB |
最大输入功率 (CW): | 6 dBm | 最大工作频率: | 400 MHz |
最小工作频率: | 最高工作温度: | 125 °C | |
最低工作温度: | -55 °C | 射频/微波设备类型: | WIDE BAND LOW POWER |
最大电压驻波比: | 3 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SBR8120 | APITECH |
获取价格 |
Wide Band Low Power Amplifier, 0MHz Min, 400MHz Max, H2, TO-8B | |
SBR8130 | APITECH |
获取价格 |
Wide Band Low Power Amplifier, 0MHz Min, 400MHz Max, H2, TO-8B | |
SBR820 | DAESAN |
获取价格 |
CURRENT 8.0 AMPERES | |
SBR8210 | MICROSEMI |
获取价格 |
Schottky ORing Diode | |
SBR8210_07 | MICROSEMI |
获取价格 |
80 Amp Schottky Rectifier | |
SBR8210E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 80A, 10V V(RRM), Silicon, DO-203AB, DO-5, 1 | |
SBR8210R | MICROSEMI |
获取价格 |
80 Amp Schottky Rectifier | |
SBR8210RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 80A, 10V V(RRM), Silicon, DO-203AB, DO-5, 1 | |
SBR8215 | MICROSEMI |
获取价格 |
Schottky ORing Diode | |
SBR8215E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 80A, 15V V(RRM), Silicon, DO-203AB, DO-5, 1 |