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SBR2A150SA-13 PDF预览

SBR2A150SA-13

更新时间: 2024-09-15 15:50:39
品牌 Logo 应用领域
美台 - DIODES 超快速恢复二极管光电二极管
页数 文件大小 规格书
3页 104K
描述
Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, GREEN, PLASTIC, SMA, 2 PIN

SBR2A150SA-13 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active包装说明:GREEN, PLASTIC, SMA, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76Is Samacsys:N
应用:SUPER FAST RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:42 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:150 V
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

SBR2A150SA-13 数据手册

 浏览型号SBR2A150SA-13的Datasheet PDF文件第2页浏览型号SBR2A150SA-13的Datasheet PDF文件第3页 
SBR2A150SA  
2.0A SBR®  
SURFACE MOUNT SUPER BARRIER RECTIFIER  
Features  
Mechanical Data  
Ultra Low Forward Voltage Drop  
Case: SMA  
Excellent High Temperature Capability  
Patented Super Barrier Rectifier Technology  
Soft, Fast Switching Capability  
150ºC Operating Junction Temperature  
Lead Free Finish, RoHS Compliant (Note 1)  
“Green” Molding Compound (No Br, Sb)  
Case Material: Molded Plastic, UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: Lead Free Plating (Matte Tin Finish.)  
Solderable per MIL-STD-202, Method 208  
Polarity Indicator: Cathode Band  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.064 grams (approximate)  
SMA  
Top View  
Bottom View  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitance load, derate current by 20%.  
Characteristic  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
Symbol  
VRRM  
VRWM  
VRM  
Value  
Unit  
150  
V
DC Blocking Voltage  
RMS Reverse Voltage  
106  
2.0  
V
A
VR(RMS)  
IO  
Average Rectified Output Current (See Figure 1)  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
42  
A
IFSM  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance Junction to Soldering (Note 2)  
Thermal Resistance Junction to Ambient (Note 3)  
Thermal Resistance Junction to Ambient (Note 4)  
Operating and Storage Temperature Range  
3
119  
Rθ  
Rθ  
Rθ  
JS  
JA  
JA  
°C/W  
88  
-65 to +150  
°C  
TJ, TSTG  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
Reverse Breakdown Voltage (Note 5)  
Symbol  
Min  
150  
-
Typ  
-
-
Max  
-
Unit  
V
Test Condition  
V(BR)R  
IR = 100µA  
0.78  
IF = 2.0A, TJ = 25ºC  
IF = 2.0A, TJ = 125ºC  
Forward Voltage Drop  
V
VF  
IR  
-
-
-
-
-
-
0.62  
0.1  
10  
mA VR = 150V, TJ = 25ºC  
mA VR = 150V, TJ = 125ºC  
Leakage Current (Note 5)  
Notes:  
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.  
2. Theoretical RθJS calculated from the top center of the die straight down to the PCB cathode tab solder junction.  
3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf. TA = 25ºC  
4. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf  
5. Short duration pulse test used to minimize self-heating effect.  
SBR is a registered trademark of Diodes Incorporated  
SBR2A150SA  
1 of 3  
www.diodes.com  
July 2008  
© Diodes Incorporated  
Document number: DS31408 Rev. 2 - 2  

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