Datasheet > SBR2U30P1

SBR2U30P1

更新时间： 2024-11-06 02:57:47

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
4页	320K
描述
2.0A SBR Super Barrier Rectifier

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中文翻译

获取价格

数据手册

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SBR2U30P1 数据手册

SBR2U30P1

2.0A SBR^®

Super Barrier Rectifier

PowerDI™123

Features

Mechanical Data

•

Case: PowerDI™123

•

Ultra Low Forward Voltage Drop

Superior Reverse Avalanche Capability

Patented Interlocking Clip Design for

High Surge Current Capacity

Patented Super Barrier Rectifier Technology

Soft, Fast Switching Capability

150ºC Operating Junction Temperature

±16KV ESD Protection (HBM, 3B)

±25KV ESD Protection (IEC61000-4-2 Level 4, Air Discharge)

Lead Free Finish, RoHS Compliant (Note 1)

“Green” Molding Compound (No Br, Sb)

Qualified to AEC-Q 101 Standards for High Reliability

Case Material: Molded Plastic, “Green” Molding

compound. UL Flammability Classification Rating

94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Polarity Indicator: Cathode Band

Terminals: Matte Tin Finish annealed over

Copper leadframe. Solderable per MIL-STD-202,

Method 208

•

Marking Information: See Page 4

Ordering Information: See Page 4

Maximum Ratings @ T_A= 25ºC unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_RM

RMS Reverse Voltage

V_R(RMS)

I_O

Average Rectified Output Current (See Figure 1)

2.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

I_FSM

E_AS

Non-Repetitive Avalanche Energy

(T_J= 25°C, I_AS= 5A, L = 8.5 mH)

105

Repetitive Peak Avalanche Energy

(T_P= 1µs, T_j= 25°C)

P_ARM

1100

Maximum Thermal Resistance

Thermal Resistance Junction to Soldering (Note 2)

Thermal Resistance Junction to Ambient (Note 3)

Thermal Resistance Junction to Ambient (Note 4)

R_ӨJS

R_ӨJA

178

123

°C/W

ºC

Operating and Storage Temperature Range

T_J, T_STG

-65 to +150

Notes:

1. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.

2. Theoretical R_ӨJScalculated from the top center of the die straight down to the PCB cathode tab solder junction.

3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.

4. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf

__________

SBR is a registered trademark of Diodes Incorporated.

PowerDI is a trademark of Diodes Incorporated.

SBR2U30P1 Rev. 4 - 2

1 of 4

www.diodes.com

January 2007

12 3 4

中文翻译

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与SBR2U30P1相关器件

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SBR2U30P1-7	DIODES	获取价格	2.0A SBR Super Barrier Rectifier
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SBR2U30SA-13	DIODES	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 30V V(RRM), Silicon, GREEN, PLASTIC, SMA, 2 PIN
SBR2U60S1F	DIODES	获取价格	2A SUPER BARRIER RECTIFIER SCHOTTKY
SBR2U60S1FQ	DIODES	获取价格	SUPER BARRIER RECTIFIER
SBR2U60S1FQ-7	DIODES	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon,
SBR30	SEMTECH	获取价格	STANDARD RECOVERY 1-PHASE SILICON BRIDGE RECTIFIERS
SBR30016JS	SANYO	获取价格	Schottky Barrier Diode (Twin Type · Cathode C
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SBR3004	APITECH	获取价格	Wide Band Low Power Amplifier, 225MHz Min, 400MHz Max, H2, TO-8B

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